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Virtual Special Topic — High temperature superconductivity
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CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of residual stress on nematic domains in BaFe2-xNixAs2 studied by angular magnetoresistance |
Ding Hu(胡定)1, Wenliang Zhang(张汶良)1, Yuan Wei(魏源)1, Xiaotian Zhang(张笑天)1, Cong Ren(任聪)1, Lei Shan(单磊)1,2, Yi-feng Yang(杨义峰)1,2, Huiqian Luo(罗会仟)1, Shiliang Li(李世亮)1,2 |
1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2. Collaborative Innovation Center of Quantum Matter, Beijing, China |
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Abstract We have studied the angular magnetoresistance of iron pnictides BaFe2-xNixAs2, which shows clear 180 degree periodicity as fitted by a cosine function. In the x = 0.065 sample, the phase of the two-fold symmetry changes 90 degrees above the tetragonal-to-orthorhombic structural transition temperature Ts. Since the phase at low temperature is associated with the rotation of orthorhombic domains by magnetic field, we show that even vacuum grease can push the presence of orthorhombic domains at temperatures much higher than Ts. Our results suggest that residual stress may have significant effects in studying the nematic orders and its fluctuations in iron pnictides.
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Received: 04 March 2016
Accepted manuscript online:
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PACS:
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74.25.fc
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(Electric and thermal conductivity)
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74.70.Xa
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(Pnictides and chalcogenides)
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Fund: Project supported by the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB07020300), the National Basic Research Program of China (Grant Nos. 2012CB821400 and 2011CBA00110), and the National Natural Science Foundation of China (Grant Nos. 11374011, 11374346, and 11305257). |
Corresponding Authors:
Shiliang Li
E-mail: slli@iphy.ac.cn
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Cite this article:
Ding Hu(胡定), Wenliang Zhang(张汶良), Yuan Wei(魏源), Xiaotian Zhang(张笑天), Cong Ren(任聪), Lei Shan(单磊), Yi-feng Yang(杨义峰), Huiqian Luo(罗会仟), Shiliang Li(李世亮) Effect of residual stress on nematic domains in BaFe2-xNixAs2 studied by angular magnetoresistance 2016 Chin. Phys. B 25 057402
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