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Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors |
Wu Shao-Hang (吴绍航)a b, Zhang Nan (张楠)a, Hu Yong-Sheng (胡永生)a, Chen Hong (陈红)c, Jiang Da-Peng (蒋大鹏)a, Liu Xing-Yuan (刘星元)a |
a State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics, and Physics, Chinese Academy of Sciences, Changchun 130033, China; b University of Chinese Academy of Sciences, Beijing 100049, China; c Key Laboratory of Optical System Advanced Manufacturing Technology, Chinese Academy of Sciences, Changchun 130033, China |
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Abstract Strontium-zinc-oxide (SrZnO) films forming the semiconductor layers of thin-film transistors (TFTs) are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide (ZnO) with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel.
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Received: 08 March 2015
Revised: 20 April 2015
Accepted manuscript online:
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PACS:
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85.30.Tv
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(Field effect devices)
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71.55.Gs
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(II-VI semiconductors)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 6140031454) and the Innovation Program of Chinese Academy of Sciences and State Key Laboratory of Luminescence and Applications. |
Corresponding Authors:
Liu Xing-Yuan
E-mail: liuxy@ciomp.ac.cn
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Cite this article:
Wu Shao-Hang (吴绍航), Zhang Nan (张楠), Hu Yong-Sheng (胡永生), Chen Hong (陈红), Jiang Da-Peng (蒋大鹏), Liu Xing-Yuan (刘星元) Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors 2015 Chin. Phys. B 24 108504
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[1] |
Hoffman R L, Norris B J and Wager J F 2003 Appl. Phys. Lett. 82 733
|
[2] |
Nomura K, Ohta H, Ueda K, Kamiya T, Hirano M and Hosono H 2003 Science 300 1269
|
[3] |
Wager J F 2003 Science 300 1245
|
[4] |
Kwon Y, Li Y, Heo Y W, Jones M, Holloway P H, Norton D P, Park Z V and Li S 2004 Appl. Phys. Lett. 84 2685
|
[5] |
Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M and Hosono H 2004 Nature 432 488
|
[6] |
Hamberg I and Granqvist C G 1986 J. Appl. Phys. 60 R123
|
[7] |
Tang C W and VanSlyke S A 1987 Appl. Phys. Lett. 51 913
|
[8] |
Lewis B G and Paine D C 2000 Mrs. Bull. 25 22
|
[9] |
Fortunato E M, Barquinha P M, Pimentel A, Goncälves A M, Marques A J, Pereira L M and Martins R F 2005 Adv. Mater. 17 590
|
[10] |
Liu Y R, Su J, Lai P T and Yao R H 2014 Chin. Phys. B 23 068501
|
[11] |
Gao Y N, Li X F and Zhang J H 2014 Acta Phys. Sin. 63 118502 (in Chinese)
|
[12] |
Park J S, Kim K, Park Y G, Mo Y G, Kim H D and Jeong J K 2009 Adv. Mater. 21 329
|
[13] |
Kim D N, Kim D L, Kim G H, Kim S J, Rim Y S, Jeong W H and Kim H J 2010 Appl. Phys. Lett. 97 192105
|
[14] |
Esro M, Vourlias G, Somerton C, Milne W I and Adamopoulos G 2015 Adv. Funct. Mater. 25 134
|
[15] |
Funabiki F, Kamiya T and Hosono H 2012 J. Ceram. Soc. Jpn. 120 447
|
[16] |
Lide D R 2010 CRC handbook of chemistry and physics (Boca Raton: CRC Press) pp. 9-65
|
[17] |
Xiong K, Robertson J and Clark S J 2007 J. Appl. Phys. 102 083710
|
[18] |
Walsh A, Da Silva J L, Wei S H, Körber C, Klein A, Piper L, DeMasi A, Smith K E, Panaccione G and Torelli P 2008 Phys. Rev. Lett. 100 167402
|
[19] |
Srikant V and Clarke D R 1998 J. Appl. Phys. 83 5447
|
[20] |
Fortunato E, Barquinha P and Martins R 2012 Adv. Mater. 24 2945
|
[21] |
Lo C C and Hsieh T E 2012 Ceram. Int. 38 3977
|
[22] |
Vygranenko Y, Wang K, Vieira M and Nathan A 2008 Phys. Status Solidi 205 1925
|
[23] |
Wang N, Liu X X and Liu X Y 2010 Adv. Mater. 22 2211
|
[24] |
Wu S, Li Y, Luo J, Lin J, Fan Y, Gan Z and Liu X 2014 Opt. Express 22 4731
|
[25] |
Liao Y, Lu Q, Fan Y and Liu X 2011 Appl. Phys. Lett. 99 023302
|
[26] |
Parhizkar M, Kumar N, Nayak P K, Singh S, Talwar S S, Major S S and Srinivasa R S 2005 Colloids and Surfaces A: Physicochemical and Engineering Aspects 257-258 445
|
[27] |
Srivastava A K, Deepa M, Bahadur N and Goyat M S 2009 Mater. Chem. Phys. 114 194
|
[28] |
Gao Y, Nagai M, Chang T C and Shyue J J 2007 Crystal Growth and Design 7 2467
|
[29] |
Pradhan D and Leung K J 2008 Phys. Chem. C 112 1357
|
[30] |
Kamiya T and Hosono H 2013 International Conference on Semiconductor Technology for ULSIC Vs. TFT 54 103
|
[31] |
Lee C G and Ananth D 2010 Appl. Phys. Lett. 96 243501
|
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