Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

doi:10.1088/1674-1056/24/10/108504

Abstract Strontium-zinc-oxide (SrZnO) films forming the semiconductor layers of thin-film transistors (TFTs) are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide (ZnO) with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel.

Keywords: thin-film transistor ZnO electron beam evaporation

Received: 08 March 2015
Revised: 20 April 2015
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	71.55.Gs	(II-VI semiconductors)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 6140031454) and the Innovation Program of Chinese Academy of Sciences and State Key Laboratory of Luminescence and Applications.

Corresponding Authors: Liu Xing-Yuan
E-mail: liuxy@ciomp.ac.cn

Cite this article:

Wu Shao-Hang (吴绍航), Zhang Nan (张楠), Hu Yong-Sheng (胡永生), Chen Hong (陈红), Jiang Da-Peng (蒋大鹏), Liu Xing-Yuan (刘星元) Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors 2015 Chin. Phys. B 24 108504

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Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

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