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A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology |
Zhang Li-Zhong (张立忠), Wang Yuan (王源), Lu Guang-Yi (陆光易), Cao Jian (曹健), Zhang Xing (张兴) |
Institute of Microelectronics, Peking University, Beijing 100871, China |
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Abstract A novel diode string-triggered gated-PiN junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor (CMOS) technology, is proposed in this paper. An embedded gated-PiN junction structure is employed to reduce the diode string leakage current to 13 nA/μ in a temperature range from 25 ℃ to 85 ℃. To provide the effective electrostatic discharge (ESD) protection in multi-voltage power supply, the triggering voltage of the novel device can be adjusted through redistributing parasitic resistance instead of changing the stacked diode number.
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Received: 28 January 2015
Revised: 20 April 2015
Accepted manuscript online:
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PACS:
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85.30.Kk
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(Junction diodes)
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85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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41.20.Cv
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(Electrostatics; Poisson and Laplace equations, boundary-value problems)
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52.35.Fp
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(Electrostatic waves and oscillations (e.g., ion-acoustic waves))
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Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606). |
Corresponding Authors:
Wang Yuan
E-mail: wangyuan@pku.edu.cn
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Cite this article:
Zhang Li-Zhong (张立忠), Wang Yuan (王源), Lu Guang-Yi (陆光易), Cao Jian (曹健), Zhang Xing (张兴) A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology 2015 Chin. Phys. B 24 108503
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