Magnetic behaviors of cerium oxide-based thin films deposited using electrochemical method

doi:10.1088/1674-1056/23/9/097503

Abstract Zn and Co multi-doped CeO₂ thin films have been prepared using an anodic electrochemical method. The structures and magnetic behaviors are characterized by several techniques, in which the oxygen states in the lattice and the absorptive oxygen bonds at the surface are carefully examined. The absorptive oxygen bond is about 50% of the total oxygen bond by using a semi-quantitative method. The value of actual stoichiometry δ' is close to 2. The experimental results indicate that the thin films are of a cerium oxide-based solid solution with few oxygen vacancies in the lattice and many absorptive oxygen bonds at the surface. Week ferromagnetic behaviors were evidenced by observed M-H hysteresis loops at room temperature. Furthermore, an evidence of relative ferromagnetic contributions was revealed by the temperature dependence of magnetization. It is believed that the ferromagnetic contributions exhibited in the M-H loops originate from the absorptive oxygen on the surface rather than the oxygen vacancies in the lattice.

Keywords: cerium oxide-based thin films anodic electrochemical method absorptive oxygen magnetic behaviors

Received: 05 January 2014
Revised: 03 April 2014
Accepted manuscript online:

PACS:	75.50.Pp	(Magnetic semiconductors)
	82.45.Aa	(Electrochemical synthesis)
	68.55.-a	(Thin film structure and morphology)
	75.70.-i	(Magnetic properties of thin films, surfaces, and interfaces)

Fund: Project supported by the Natural Science Foundation of Zhejiang Province, China (Grant No. LY12A01002), the National Natural Science Foundation of China (Grant Nos. 11204058 and 21073162), and the Hangzhou Dianzi University, China (Grant No. KYF09150603).

Corresponding Authors: Peng Ying-Zi
E-mail: yingzip@hdu.edu.cn

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Peng Ying-Zi (彭英姿), Li Yuan (李源), Bai Ru (白茹), Huo De-Xuan (霍德璇), Qian Zheng-Hong (钱正洪) Magnetic behaviors of cerium oxide-based thin films deposited using electrochemical method 2014 Chin. Phys. B 23 097503

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