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Special Issue:
Virtual Special Topic — Magnetism and Magnetic Materials
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| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effects of chemical pressure on diluted magnetic semiconductor (Ba,K)(Zn,Mn)2As2 |
| Y Peng(彭毅)1,2, S Yu(于爽)2,3, G Q Zhao(赵国强)2,3, W M Li(李文敏)2,3, J F Zhao(赵建发)2,3, L P Cao(曹立朋)2, X C Wang(望贤成)2,3, Q Q Liu(刘清青)2,3, S J Zhang(张思佳)2,3, R Z Yu(于润泽)2,3, Z Deng(邓正)2,3, X H Zhu(朱小红)1, C Q Jin(靳常青)2,3,4 |
1 College of Materials Science & Engineering, Sichuan University, Chengdu 610064, China;
2 Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 School of Physics, University of Chinese Academy of Sciences, Beijing 100190, China;
4 Collaborative Innovation Center of Quantum Matter, Beijing 100871, China |
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Abstract Chemical pressure induced by iso-valent doping has been widely employed to tune physical properties of materials. In this work, we report effects of chemical pressure by substitution of Sb or P into As on a recently discovered diluted magnetic semiconductor (Ba,K)(Zn,Mn)2As2, which has the record of reliable Curie temperature of 230 K due to independent charge and spin doping. Sb and P are substituted into As-site to produce negative and positive chemical pressures, respectively. X-ray diffraction results demonstrate the successful chemical solution of dopants. Magnetic properties of both K-under-doped and K-optimal-doped samples are effectively tuned by Sb- and P-doping. The Hall effect measurements do not show decrease in carrier concentrations upon Sb- and P-doping. Impressively, magnetoresistance is significantly improved from 7% to 27% by only 10% P-doping, successfully extending potential application of (Ba,K)(Zn,Mn)2As2.
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Received: 02 February 2019
Revised: 25 February 2019
Accepted manuscript online:
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PACS:
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75.50.Pp
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(Magnetic semiconductors)
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74.62.Fj
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(Effects of pressure)
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75.50.-y
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(Studies of specific magnetic materials)
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| Fund: Project supported by the National Key R&D Program of China (Grant No. 2017YFB0405703), the Ministry of Science and Technology of China (Grant Nos. 2018YFA03057001 and 2015CB921000), and the National Natural Science Foundation of China through the Research Projects (Grant Nos. 11534016 and 61504166). |
Corresponding Authors:
Z Deng, X H Zhu, C Q Jin
E-mail: dengzheng@iphy.ac.cn;xhzhu@scu.edu.cn;Jin@iphy.ac.cn
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Cite this article:
Y Peng(彭毅), S Yu(于爽), G Q Zhao(赵国强), W M Li(李文敏), J F Zhao(赵建发), L P Cao(曹立朋), X C Wang(望贤成), Q Q Liu(刘清青), S J Zhang(张思佳), R Z Yu(于润泽), Z Deng(邓正), X H Zhu(朱小红), C Q Jin(靳常青) Effects of chemical pressure on diluted magnetic semiconductor (Ba,K)(Zn,Mn)2As2 2019 Chin. Phys. B 28 057501
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