SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 |
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Complete coverage of reduced graphene oxide on silicon dioxide substrates |
Huang Jingfenga b, Melanie Larisikac d, Chen Hua b, Steve Faulknere, Myra A. Nimmob e, Christoph Nowakc d, Alfred Tok Iing Yoonga b |
a School of Materials Science and Engineering, Nanyang Technological University, Blk N4.1, Singapore 639798; b Institute for Sports Research, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798; c Austrian Institute of Technology (AIT) GmbH, Donau-City Str. 1, Vienna, 1220, Austria; d Center for Biomimetic Sensor Science, 50 Nanyang Drive, Singapore 637553; e School of Sport, Exercise and Health Sciences, Loughborough University, JB.1.07, Leicestershire, United Kingdom LE113TU |
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Abstract Reduced graphene oxide (RGO) has the advantage of an aqueous and industrial-scale production route. No other approaches can rival the RGO field effect transistor platform in terms of cost (< US$1) and portability (millimetre scale). However the large deviations in the electrical resistivity of this fabricated material prevent it from being used widely. After an ethanol chemical vapor deposition (CVD) post-treatment to graphene oxide with ethanol, carbon islets are deposited preferentially at the edges of existing flakes. With a 2-h treatment, the standard deviation in electrical resistance of the treated chips can be reduced by 99.95%. Thus this process could enable RGO to be used in practical electronic devices.
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Received: 04 September 2013
Revised: 18 February 2014
Accepted manuscript online:
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Fund: Project supported by the Institute for Sports Research (ISR) of Nanyang Technological University (NTU), the National Institute for Health Research (NIHR) Diet, Lifestyle & Physical Activity Biomedical Research Unit based at University Hospitals of Leicester and Loughborough University, and the International Graduate School Bio-Nano-Tech; a Joint Ph D Program of University of Natural Resources and Life Sciences Vienna (BOKU), the Austrian Institute of Technology (AIT) and NTU. |
Corresponding Authors:
Alfred Tok Iing Yoong
E-mail: MIYTok@ntu.edu.sg
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Cite this article:
Huang Jingfeng, Melanie Larisika, Chen Hu, Steve Faulkner, Myra A. Nimmo, Christoph Nowak, Alfred Tok Iing Yoong Complete coverage of reduced graphene oxide on silicon dioxide substrates 2014 Chin. Phys. B 23 088104
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