| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application |
| Hai-Qing Xie(谢海情)1, Dan Wu(伍丹)1, Xiao-Qing Deng(邓小清)1, Zhi-Qiang Fan(范志强)1,†, Wu-Xing Zhou(周五星)2, Chang-Qing Xiang(向长青)3, and Yue-Yang Liu(刘岳阳)4 |
1 Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114, China;
2 School of Materials Science and Engineering & Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Hunan University of Science and Technology, Xiangtan 411201, China;
3 College of Information Science and Engineering, Jishou University, Jishou 416000, China;
4 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
|
|
|
|
Abstract We preform a first-principles study of performance of 5 nm double-gated (DG) Schottky-barrier field effect transistors (SBFETs) based on two-dimensional SiC with monolayer or bilayer metallic 1T-phase MoS2 contacts. Because of the wide bandgap of SiC, the corresponding DG SBFETs can weaken the short channel effect. The calculated transfer characteristics also meet the standard of the high performance transistor summarized by international technology road-map for semiconductors. Moreover, the bilayer metallic 1T-phase MoS2 contacts in three stacking structures all can further raise the ON-state currents of DG SiC SBFETs in varying degrees. The above results are helpful and instructive for design of short channel transistors in the future.
|
Received: 28 February 2021
Revised: 14 March 2021
Accepted manuscript online: 16 March 2021
|
|
PACS:
|
71.15.Mb
|
(Density functional theory, local density approximation, gradient and other corrections)
|
| |
73.20.-r
|
(Electron states at surfaces and interfaces)
|
| |
73.63.-b
|
(Electronic transport in nanoscale materials and structures)
|
| |
73.40.-c
|
(Electronic transport in interface structures)
|
|
| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12074046 and 12074115), the Hunan Provincial Natural Science Foundation of China (Grant Nos. 2020JJ4597, 2021JJ40558, and 2021JJ30733), the Scientific Research Fund of Hunan Provincial Education Department, China (Grant Nos. 20K007 and 20C0039), and the Key Projects of Changsha Science and Technology Plan (Grant No. kq1901102). |
Corresponding Authors:
Zhi-Qiang Fan
E-mail: zqfan@csust.edu.cn
|
Cite this article:
Hai-Qing Xie(谢海情), Dan Wu(伍丹), Xiao-Qing Deng(邓小清), Zhi-Qiang Fan(范志强), Wu-Xing Zhou(周五星), Chang-Qing Xiang(向长青), and Yue-Yang Liu(刘岳阳) Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application 2021 Chin. Phys. B 30 117102
|
[1] Zhang D D, Song X Z, Li H Y, Cai M H, Bin Z Y, Huang T Y and Duan L 2018 Adv. Mater. 30 1707590
[2] Cui Y, Li B, Li J B and Wei Z M 2018 Sci. Chin.-Phys. Mech. Astron. 61 016801
[3] Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N and Strano M S 2012 Nat. Nanotech. 7 699
[4] Zhao J, Zeng H and Zhou X F 2019 Carbon 145 1
[5] Chen X K and Chen K Q 2020 J. Phys.: Condens. Matter 32 153002
[6] Cui Y, Zhou Z Q, Li T, Wang K Y, Li J B and Wei Z M 2019 Adv. Funct. Mater. 29 1900040
[7] Liu Q, Li J J, Wu D, Deng X Q, Zhang Z H, Fan Z Q and Chen K Q 2021 Phys. Rev. B 104 045412
[8] Wu D, Cao X H, Jia P J, Zeng Y J, Feng Y X, Tang L M, Zhou W X and Chen K Q 2020 Sci. Chin.-Phys. Mech. Astron. 63 276811
[9] Zhou W X, Cheng Y, Chen K Q, Xie G F, Wang T and Zhang G 2020 Adv. Funct. Mater. 30 1903829
[10] Wu D, Huang L, Jia P Z, Cao X H, Fan Z Q, Zhou W X and Chen K Q 2021 Appl. Phys. Lett. 119 063503
[11] Radisavljevic B, Radenovic A, Brivio J, Giacometti V and Kis A 2011 Nat. Nanotech. 6 147
[12] Quhe R G, Wang Y Y and Lu J 2015 Chin. Phys. B 24 088105
[13] Lu N D, Wang L F, Li L and Liu M 2017 Chin. Phys. B 26 036804
[14] Ren Y, Liu P, Zhou B L, Zhou X Y and Zhou G H 2019 Phys. Rev. Appl. 12 064025
[15] Yan X F, Chen Q, Li L L, Guo H Z, Peng J Z and Peeters F M 2020 Nano Energy 75 104953
[16] Sang P P, Ma X L, Wang Q W, Wei W, Wang F, Wu J X, Zhan X P, Li Y and Chen J Z 2021 Appl. Surf. Sci. 536 147836
[17] Fan Z Q, Jiang X W, Luo J W, Jiao L Y, Huang R, Li S S and Wang L W 2017 Phys. Rev. B 96 165402
[18] Fan Z Q, Jiang X W, Chen J Z and Luo J W 2018 ACS Appl. Mater. Interfaces 10 19271
[19] Uchino T, Gili E, Tan L, Buiu O, Hall S and Ashburn P 2012 Semicond. Sci. Technol. 27 062002
[20] Liu H Neal, A T and Ye P D 2012 ACS Nano 6 8563
[21] Xie H Q, Li J Y, Liu G, Cai X Y and Fan Z Q 2019 IEEE Trans. Electron Devices 66 5111
[22] Xie H Q, Li J Y, Liu G, Cai X Y and Fan Z Q 2020 IEEE Trans. Electron Devices 67 4130
[23] Gao R B, Peng X F and Chen K Q 2018 Physica E 104 302
[24] Zeng J, Chen K Q and Tong Y X 2018 Carbon 127 611
[25] Wu D, Cao X H, Chen S Z, Feng Y X, Tang L M, Zhou W X and Chen K Q 2019 J. Mater. Chem. A 7 19037
[26] Ning F, Chen S Z, Zhang Y, Liao G H, Tang P Y, Li Z L and Tang L M 2019 Appl. Surf. Sci. 496 143629
[27] An Y P, Hou Y S, Wang K, Gong S J, Ma C L, Zhao C X, Wang T X, Jiao Z Y, Wang H Y and Wu R Q 2020 Adv. Funct. Mater. 30 2002939
[28] Xiao Y, Wang Z W, Shi L, Jiang X W, Li S S and Wang L W 2020 Sci. Chin.-Phys. Mech. Astron. 63 277312
[29] Fan P, Qian G J, Wang D F, Li E, Wang Q, Chen H, Lin X and Gao H J 2021 Chin. Phys. B 30 018105
[30] Smidstrup S 2020 J. Phys.: Condens. Matter 32 015901
[31] Büttiker M, Imry Y, Landauer R and Pinhas S 1985 Phys. Rev. B 31 6207
[32] Cui X Q, Liu Q, Fan Z Q and Zhang Z H 2020 Org. Electron. 84 105808
[33] Fan Z Q, Chen J Z and Jiang X W 2018 J. Phys. D: Appl. Phys. 51 335104
[34] Fan Z Q, Zhang Z H and Yang S Y 2020 Nanoscale 12 21750 |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
