High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy

doi:10.1088/1674-1056/23/1/017805

Abstract The GaSb-based laser shows its superiority in the 3–4 μm wavelength range. However, for a quantum well (QW) laser structure of InGaAsSb/AlGaInAsSb multiple-quantum well (MQW) grown on GaSb, uniform content and high compressive strain in InGaAsSb/AlGaInAsSb are not easy to control. In this paper, the influences of the growth temperature and compressive strain on the photoluminescence (PL) property of a 3.0-μm InGaAsSb/AlGaInAsSb MQW sample are analyzed to optimize the growth parameters. Comparisons among the PL spectra of the samples indicate that the In_0.485GaAs_0.184Sb/Al_0.3Ga_0.45In_0.25As_0.22Sb_0.78 MQW with 1.72% compressive strain grown at 460 ℃ posseses the optimum optical property. Moreover, the wavelength range of the MQW structure is extended to 3.83 μm by optimizing the parameters.

Keywords: GaSb multiple-quantum well photoluminescence

Received: 25 April 2013
Revised: 10 May 2013
Accepted manuscript online:

PACS:	78.55.Cr	(III-V semiconductors)
	78.66.Fd	(III-V semiconductors)
	78.67.De	(Quantum wells)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2013CB932904, 2012CB932701, 2011CB922201, and 2010CB327600), the National Special Funds for the Development of Major Research Equipment and Instruments, China (Grant No. 2012YQ140005), and the National Natural Science Foundation of China (Grant Nos. 61274013, U1037602, and 61290303).

Corresponding Authors: Niu Zhi-Chuan
E-mail: zcniu@semi.ac.cn

Cite this article:

Xing Jun-Liang (邢军亮), Zhang Yu (张宇), Xu Ying-Qiang (徐应强), Wang Guo-Wei (王国伟), Wang Juan (王娟), Xiang Wei (向伟), Ni Hai-Qiao (倪海桥), Ren Zheng-Wei (任正伟), He Zhen-Hong (贺振宏), Niu Zhi-Chuan (牛智川) High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 2014 Chin. Phys. B 23 017805

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High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy

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