In situ electronic structural study of VO2 thin film across the metal–insulator transition

doi:10.1088/1674-1056/22/12/127103

Abstract The in situ valence band photoemission spectrum (PES) and X-ray absorption spectrum (XAS) at V L_Ⅱ-L_Ⅲ edges of the VO₂ thin film, which is prepared by pulsed laser deposition, are measured across the metal–insulator transition (MIT) temperature (T_MIT=67 ℃). The spectra show evidence for changes in the electronic structure depending on temperature. Across the T_MIT, pure V 3d characteristic d_‖ and O 2p-V 3d hybridization characteristic π_pd, σ_pd bands vary in binding energy position and density of state distributions. The XAS reveals a temperature-dependent reversible energy shift at the V L_Ⅲ-edge. The PES and XAS results imply a synergetic energy position shift of occupied valence bands and unoccupied conduction band states across the phase transition. A joint inspection of the PES and XAS results shows that the MIT is not a one-step process, instead it is a process in which a semiconductor phase appears as an intermediate state. The final metallic phase from insulating state is reached through insulator–semiconductor, semiconductor–metal processes, and vice versa. The conventional MIT at around the T_MIT=67 ℃ is actually a semiconductor–insulator transformation point.

Keywords: vanadium dioxide metal–insulator transition electronic structure photoemission spectroscopy

Received: 07 March 2013
Revised: 14 April 2013
Accepted manuscript online:

PACS:	71.30.+h	(Metal-insulator transitions and other electronic transitions)
	79.60.-i	(Photoemission and photoelectron spectra)
	78.70.Dm	(X-ray absorption spectra)
	73.20.At	(Surface states, band structure, electron density of states)

Fund: Project supported by the Natural Science Foundation of the Chinese Academy of Sciences (Grant No. H91G750Y21).

Corresponding Authors: Kurash Ibrahim
E-mail: kurash@ihep.ac.cn

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Emin Muhemmed (伊明江·买买提), Abduleziz Ablat (阿布都艾则孜·阿布来提), Wu Rui (吴蕊), Wang Jia-Ou (王嘉鸥), Qian Hai-Jie (钱海杰), Kurash Ibrahim (奎热西·依布拉欣) In situ electronic structural study of VO₂ thin film across the metal–insulator transition 2013 Chin. Phys. B 22 127103

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In situ electronic structural study of VO₂ thin film across the metal–insulator transition

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