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Control of gain and thermal carrier loss profiles for mode optimization in 980-nm broad-area vertical-cavity surface-emitting lasers |
Wu Jian (吴坚), Cui Huai-Yang (崔怀洋), Huang Meng (黄梦), Ma Ming-Lei (马明磊) |
Department of Applied Physics, Beihang University, Beijing 100191, China |
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Abstract Optical gain and thermal carrier loss distributions regarding current diffusion and various electric contact areas are investigated to improve the near-field modes from the ring-shape to a Gaussian-like configuration for extra-broad-area and oxide-confined vertical-cavity surface-emitting lasers. In this work an equivalent circuit network model is used. The resistance of the continuously-graded distributed Bragg reflectors (DBRs), the current diffusion and the temperature effect due to different electric-contact areas are calculated and analyzed at first, as these parameters affect one another and are the key factors in determining the gain and thermal carrier loss. Finally, the gain and thermal carrier loss distributions are calculated and discussed.
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Received: 29 January 2013
Revised: 13 March 2013
Accepted manuscript online:
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PACS:
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42.55.Px
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(Semiconductor lasers; laser diodes)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.40.Cg
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(Contact resistance, contact potential)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10974012). |
Corresponding Authors:
Wu Jian
E-mail: jwu2@buaa.edu.cn
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Cite this article:
Wu Jian (吴坚), Cui Huai-Yang (崔怀洋), Huang Meng (黄梦), Ma Ming-Lei (马明磊) Control of gain and thermal carrier loss profiles for mode optimization in 980-nm broad-area vertical-cavity surface-emitting lasers 2013 Chin. Phys. B 22 124203
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