Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers

doi:10.1088/1674-1056/22/9/096103

Abstract Monte Carlo simulations reveal considerable straggling of energy loss by the same ions with the same energy in fully-depleted silicon-on-insulator (FDSOI) devices with ultra-thin sensitive silicon layers down to 2.5 nm. The absolute straggling of deposited energy decreases with decreasing thickness of the active silicon layer. While the relative straggling increases gradually with decreasing thickness of silicon films and exhibits a sharp rise as the thickness of the silicon film descends below a threshold value of 50 nm, with the dispersion of deposited energy ascending above±10%. Ion species and energy dependence of the energy-loss straggling are also investigated. For a given beam, the dispersion of deposited energy results in large uncertainty on the actual linear energy transfer (LET) of incident ions, and thus single event effect (SEE) responses, which pose great challenges for traditional error rate prediction methods.

Keywords: single event effects energy-loss straggling ultra-thin silicon layer Monte Carlo simulation

Received: 16 January 2013
Revised: 03 April 2013
Accepted manuscript online:

PACS:	61.82.Fk	(Semiconductors)
	02.50.Ng	(Distribution theory and Monte Carlo studies)
	61.80.Jh	(Ion radiation effects)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003 and 10975164).

Corresponding Authors: Zhang Zhan-Gang, Liu Jie
E-mail: zhangang@impcas.ac.cn; j.liu@impcas.ac.cn

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Zhang Zhan-Gang (张战刚), Liu Jie (刘杰), Hou Ming-Dong (侯明东), Sun You-Mei (孙友梅), Zhao Fa-Zhan (赵发展), Liu Gang (刘刚), Han Zheng-Sheng (韩郑生), Geng Chao (耿超), Liu Jian-De (刘建德), Xi Kai (习凯), Duan Jing-Lai (段敬来), Yao Hui-Jun (姚会军), Mo Dan (莫丹), Luo Jie (罗捷), Gu Song (古松), Liu Tian-Qi (刘天奇) Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers 2013 Chin. Phys. B 22 096103

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Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers

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