Enhancing light extraction of GaN-based blue light-emitting diodes by a tuned nanopillar array

doi:10.1088/1674-1056/23/1/018502

Abstract Surface patterning of p-GaN to improve the light extraction efficiency of GaN-based blue light-emitting diodes (LEDs) has been investigated. Periodic nanopillar arrays on p-GaN have been fabricated by polystyrene (PS) nanosphere lithography; the diameter of the nanopillars can be tuned to optimize the electrical and optical properties of the LEDs. The electroluminescence intensity of the nanopillar-patterned LEDs is better than that of conventional LEDs; the greatest enhancement increased the intensity by a factor of 1.41 at a 20 mA injection current. The enhancements can be explained by a model of bilayer film on a GaN substrate. This method may serve as a practical approach to improve the efficiency of light extraction from LEDs.

Keywords: light-emitting devices nanosphere lithography electroluminescence extraction efficiency

Received: 20 June 2013
Revised: 08 August 2013
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	81.16.Nd	(Micro- and nanolithography)
	78.60.Fi	(Electroluminescence)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10774195, U0834001, 10974263, 11174374, and 10725420), the Key Program of Ministry of Education, China (Grant No. 309024), the Program for New Century Excellent Talents in University of Ministry of Education of China, and the National Basic Research Program of China (Grant No. 2010CB923200).

Corresponding Authors: Jin Chong-Jun
E-mail: jinchjun@mail.sysu.edu.cn

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Chen Zhan-Xu (陈湛旭), Ren Yuan (任远), Xiao Guo-Hui (肖国辉), Li Jun-Tao (李俊韬), Chen Xia (陈夏), Wang Xue-Hua (王雪华), Jin Chong-Jun (金崇君), Zhang Bai-Jun (张佰君) Enhancing light extraction of GaN-based blue light-emitting diodes by a tuned nanopillar array 2014 Chin. Phys. B 23 018502

[1]	Schubert E F and Kim J K 2005 Science 308 1274
[2]	Truong T A, Campos L M, Matioli E, Meinel I, Hawker C J, Weisbuch C and Petroff P M 2009 Appl. Phys. Lett. 94 023101
[3]	Kwon M K, Kim J Y, Park I K, Kim K S, Jung G Y, Park S J, Kim J W and Kim Y C 2008 Appl. Phys. Lett. 92 251110
[4]	Lin C F, Zheng J H, Yang Z J, Dai J J, Lin D Y, Chang C Y, Lai Z X and Hong C S 2006 Appl. Phys. Lett. 88 083121
[5]	Ke M Y, Wang C Y, Chen L Y, Chen H H, Chiang H L, Cheng Y W, Hsieh M Y, Chen C P and Huang J J 2009 IEEE J. Sel. Top. Quantum Electron. 15 1242
[6]	An H M, Sim J I, Shin K S, Sung Y M and Kim T G 2012 IEEE J. Sel. Top. Quantum Electron. 48 891
[7]	Park J H, Park J W, Park I K, Park I K and Kim D Y 2012 App. Phys. Express 5 022101
[8]	Xiong C, Zhang B, Kang X N, Dai T and Zhang G Y 2010 Semicond. Sci. Technol. 25 065006
[9]	Liu S H, Feng Y C, Niu H B and Li Y 2006 Chin. Phys. 15 702
[10]	Chen J J, Su Y K, Lin C L, Chen S M, Li W L and Kao C C 2008 IEEE Photon. Technol. Lett. 20 1193
[11]	Wang C C, Ku H, Liu C C, Chong K K, Hung C I, Wang Y H and Houng M P 2007 Appl. Phys. Lett. 91 121109
[12]	McGroddy K, David A, Matioli E, Iza M, Nakamura S, DenBaars S, Speck J S, Weisbuch C and Hu E L 2008 Appl. Phys. Lett. 93 103502
[13]	Lai C F, Chao C H, Kuo H C, Yen H H, Lee C E and Yeh W Y 2009 Appl. Phys. Lett. 94 123106
[14]	Kim J Y, Kwon M K, Lee K S, Park S J, Kim S H and Lee K D 2007 Appl. Phys. Lett. 91 181109
[15]	Kim J Y, Kwon M K, Park S J, Kim S H and Lee K D 2010 Appl. Phys. Lett. 96 251103
[16]	Chen X L, Kong F M, Li K, Gao H and Yue Q Y 2013 Acta Phys. Sin. 62 017805 (in Chinese)
[17]	Kim T S, Kim S M, Jang Y H and Jung G Y 2007 Appl. Phys. Lett. 91 171114
[18]	Wang P, Gan Z and Liu S 2009 Opt. Laser Technol. 41 823
[19]	He A H, Zhang Y, Zhu X H, Chen X W, Fan G H and He M 2010 Chin. Phys. B 19 068101
[20]	Kim D H, Cho C O, Roh Y G, Jeon H, Park Y S, Cho J, Im J S, Sone C, Park Y, Choi W J and Park Q H 2005 Appl. Phys. Lett. 87 203508
[21]	Wierer J J, Krames M R, Epler J E, Gardner N F, Craford M G, Wendt J R, Simmons J A and Sigalas M M 2004 Appl. Phys. Lett. 84 3885
[22]	Xu X S, Xiong Z G, Sun Z H, Du W, Lu L, Chen H D, Xiong Z G, Jin A Z and Zhang D Z 2006 Acta Phys. Sin. 55 1248 (in Chinese)
[23]	Windisch R, Dutta B, Kuijk M, Knobloch A, Meinlschmidt S, Schoberth S and Kiesel P 2000 IEEE Eelectron Device Lett. 47 1492
[24]	Sim J I, Lee B G, Yang J W, Yoon H and Kim T G 2011 Jpn. J. Appl. Phys. 50 102101
[25]	Chen X, Liang Z H, Chen Z X, Yang W M, Chen T F, Jin C J and Zhang B J 2013 Chin. Phys. B 22 048101
[26]	Zhu J H, Wang L J, Zhang S M, Wang H, Zhao D G, Zhu J J, Liu Z S, Jiang D S and Yang H 2011 Chin. Phys. B 20 077804
[27]	Wan T T, Ye Z Q, Tao T, Xie Z L, Zhang R, Liu B, Xiu X Q, Li Y, Han P, Shi Y and Zheng Y D 2013 Chin. Phys. B 22 088102
[28]	Tikhodeev S G, Yablonskii A L, Muljarov E A, Gippius N A and Ishihara T 2002 Phys. Rev. B 66 045102

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Enhancing light extraction of GaN-based blue light-emitting diodes by a tuned nanopillar array

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