Low driving voltage in organic light-emitting diode using MoO3/NPB multiple quantum well structure in hole transport layer

doi:10.1088/1674-1056/22/2/027805

Abstract Driving voltage of organic light-emitting diode (OLED) is lowered by employing molybdenum trioxide (MoO₃)/N, N'-bis(naphthalene-1-yl)-N,N'-bis(phe-nyl)-benzidine (NPB) multiple quantum well (MQW) structure in hole transport layer. For the device with double quantum well (DQW) structure of ITO/ [MoO₃ (2.5 nm)/NPB (20 nm)]₂/Alq₃(50 nm)/LiF (0.8 nm)/Al (120 nm)], the turn-on voltage is reduced to 2.8 V, which is lowered by 0.4 V compared with that of the control device (without MQW structures), the driving voltage is 5.6 V, which is reduced by 1 V compared with that of the control device at the 1000 cd/m². In this work, the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure, which is attributed not only to the reducing energy barrier between ITO and NPB, but also to the forming charge transfer complex between MoO₃ and NPB induced by the interfacial doping effect of MoO₃.

Keywords: organic light-emitting devices low driving voltage multiple quantum wells charge transfer complex

Received: 16 May 2012
Revised: 06 September 2012
Accepted manuscript online:

PACS:	78.60.Fi	(Electroluminescence)
	85.35.Be	(Quantum well devices (quantum dots, quantum wires, etc.))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60906022 and 60676051); the Natural Science Foundation of Tianjin, China (Grant No. 10JCYBJC01100); the Scientific Developing Foundation of Tianjin Education Commission, China (Grant No. 2011ZD02); and the Jiangsu Natural Science Development Foundation for University, China (Grant No. 09KJB140006).

Corresponding Authors: Wu Xiao-Ming
E-mail: wxm@mail.nankai.edu.cn

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Mu Xue (穆雪), Wu Xiao-Ming (吴晓明), Hua Yu-Lin (华玉林), Jiao Zhi-Qiang (焦志强), Shen Li-Ying (申利莹), Su Yue-Ju (苏跃举), Bai Juan-Juan (白娟娟), Bi Wen-Tao (毕文涛), Yin Shou-Gen (印寿根), Zheng Jia-Jin (郑加金 ) Low driving voltage in organic light-emitting diode using MoO₃/NPB multiple quantum well structure in hole transport layer 2013 Chin. Phys. B 22 027805

[1]	Tang C W and VanSlyke S A 1987 Appl. Phys. Lett. 51 913
[2]	Li W, Wei X, Yu L, Jun W Y and Yu C D 2011 Displays. 32 45
[3]	Yu J S, Suo F, Li W Z, Li H, Li L and Jiang Y D 2007 Acta Phys. Chim. Sin. 23 1821 (in Chinese)
[4]	Tang X Q, Yu J.S, Li L, Wang J and Jiang Y D 2008 Acta Phys. Chim. Sin. 24 1012 (in Chinese)
[5]	Meng L C, Lou Z D, Yang S Y, Hou Y B, Teng F, Liu X J and Li Y B 2012 Chin. Phys. B 21 088504
[6]	Kyoung S Y and Jun Y L 2009 Synth. Met. 159 69
[7]	Li L S, Guan M, Cao G H, Li Y Y and Zeng Y P 2012 Displays. 33 17
[8]	Wei B, Yamamoto S, Ichikawa M, Li C, Fukuda T and Taniguchi Y 2007 Semicond. Sci. Technol. 22 788
[9]	Zhang H M and Wallace C H 2008 IEEE Trans. Electron. Dev. 55 2517
[10]	Hou L T, Liu P Y, Zhang J L, Wu C H, Li Y W and Wu B 2010 Chin. J. Lumin. 31 326 (in Chinese)
[11]	Wang F X, Qiao X F, Xiong T and Ma D G 2008 Org. Electronics 9 985
[12]	Zhang D D, Feng J, Liu Y F, Zhong Y Q, Bai Y, Jin Y, Xie G H, Xue Q, Zhao Y, Liu S Y and Sun H B 2009 Appl. Phys. Lett. 94 223306
[13]	Toshinori M, Yoshiki K and Hideyuki M 2007 Appl. Phys. Lett. 91 253504
[14]	Liu G Q, Ji W Y, Xie W F and Zhang H Z 2011 Spectroscopy and Spectral Analysis 31 882 (in Chinese)
[15]	Li L S, Guan M, Cao G H, Li Y Y and Zeng Y P 2010 Appl. Phys. A 99 251
[16]	Riel H, Brütting W, Beierlein T, Haskal E, Müller P and Rieß W 2000 Synth. Met. 111-112 303
[17]	Zhang D D, Feng J, Chen L, Wang H, Liu Y F, Jin Y, Bai Y, Zhong Y Q and Sun H B 2011 IEEE J. Quantum Electron. 47 591
[18]	Hamwi S, Meyer J, Winkler T, Riedl T and Kowalsky W 2009 Appl. Phys. Lett. 94 253307
[19]	Shin W J, Lee J Y, Kim J C, Yoon T H, Kim T S and Song O K 2008 Org. Electronics 9 333
[20]	Ju H N, Xu Z, Zhao S L, Zhang F J, Kong C, Yan G and Gong W 2011 Acta Phys. Sin. 59 8093 (in Chinese)
[21]	Haq K, Khan M A, Zhang X W, Zhang L, Jiang X Y and Zhang Z L 2010 J. Non-Cryst. Solids 356 1012

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Low driving voltage in organic light-emitting diode using MoO3/NPB multiple quantum well structure in hole transport layer

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Low driving voltage in organic light-emitting diode using MoO₃/NPB multiple quantum well structure in hole transport layer