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Chin. Phys. B, 2013, Vol. 22(6): 067701    DOI: 10.1088/1674-1056/22/6/067701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation

Sun Jia-Bao (孙家宝)a b, Yang Zhou-Wei (杨周伟)a, Geng Yang (耿阳)b, Lu Hong-Liang (卢红亮)b, Wu Wang-Ran (吴汪然)a, Ye Xiang-Dong (叶向东)a, David Zhang Wei (张卫)b, Shi Yi (施毅)a, Zhao Yi (赵毅)a c
a School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
b State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China;
c State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
Abstract  Aluminum-oxide films deposited as gate dielectrics on germanium (Ge) by atomic layer deposition (ALD) were post oxidized in an ozone atmosphere. No additional interfacial layer was detected by the high-resolution cross-sectional transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) measurements made after the ozone post oxidation (OPO) treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment.
Keywords:  Al2O3 gate dielectric      ozone post oxidation      equivalent oxide thickness      electrical properties  
Received:  15 September 2012      Revised:  19 December 2012      Accepted manuscript online: 
PACS:  77.55.D-  
  61.72.uf (Ge and Si)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  68.47.Fg (Semiconductor surfaces)  
Fund: Project supported by the National Program on Key Basic Research Projects (973 Program) of China (Grant No. 2011CBA00607), the National Natural Science Foundation of China (Grant Nos. 61106089 and 51102048), the National Science and Technology Major Projects (Grant No. 2009ZX02035), the State Key Laboratory of ASIC and System Project (Grant No. 11MS017), and the Open Funds of State Key Laboratory of ASIC and System at Fudan University (Grant No. 10KF001).
Corresponding Authors:  Lu Hong-Liang, Zhao Yi     E-mail:  honglianglu@fudan.edu.cn; yzhao@nju.edu.cn

Cite this article: 

Sun Jia-Bao (孙家宝), Yang Zhou-Wei (杨周伟), Geng Yang (耿阳), Lu Hong-Liang (卢红亮), Wu Wang-Ran (吴汪然), Ye Xiang-Dong (叶向东), David Zhang Wei (张卫), Shi Yi (施毅), Zhao Yi (赵毅) Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation 2013 Chin. Phys. B 22 067701

[1] Saraswat K, Chui C O, Donghyun K, Krishnamohan T and Pethe A 2006 Tech. Dig. - Int. Electron Devices Meet. 659
[2] Takagi S, Mizuno T, Tezuka T, Sugiyama N, Numata T, Usuda K, Moriyama Y, Nakaharai S, Koga J, Tanabe A, Hirashita N and Maeda T 2003 Tech. Dig. - Int. Electron Devices Meet. 57
[3] Shang H, Frank M M, Gusev E P, Chu J O, Bedell S W, Guarini K W and Ieong M 2006 IBM J. Res. Dev. 50 377
[4] Saraswat K C, Chui C O, Krishnamohan T, Nayfeh A and McIntyre P 2005 Microelectron. Eng. 80 15
[5] Spiga S, Wiemer C, Tallarida G, Scarel G, Ferrari S, Seguini G and Fanciulli M 2005 Appl. Phys. Lett. 87 112904
[6] Delabie A, Bellenger F, Houssa M, Conard T, Elshocht S V, Caymax M, Heyns M and Meuris M 2007 Appl. Phys. Lett. 91 082904
[7] Li X F, Liu X J, Zhang W Q, Fu Y Y, Li A D, Li H and Wu D 2011 Appl. Phys. Lett. 98 162903
[8] Matsubara H, Sasada T, Takenaka M and Takagi S 2008 Appl. Phys. Lett. 93 032104
[9] Watanabe H, Okamoto G, Kutsuki K, Harriesl J, Yoshigoe A, Teraoka Y, Hosoi T and Shimura T 2010 Proceeding of International Symposium on Technology Evolution for Silicon Nano-Electronics, June 3-5, 2010, Tokyo, Japan, p. 11
[10] Tabata T, Lee C H, Kita K and Toriumi A 2008 ECS Trans. 16 479
[11] Radtke C, Krug C, Soares G V, Baumvol I J R, Lopes J M J, Durgun-Ozben E, Nichau A, Schubert J and Mantl S 2010 Electrochem. Solid State Lett. 13 G37
[12] Zhang R, Iwasaki T, Taoka N, Takenaka M and Takagi S 2011 Appl. Phys. Lett. 98 112902
[13] Zhang R, Iwasaki T, Taoka N, Takenaka M and Takagi S 2012 IEEE Trans. Electron Dev. 59 335
[14] Kuzum D, Krishnamohan T, Pethe A J, Okyay A K, Oshima Y, Sun Y, McVittie J P, Pianette P A, McIntyre P C and Saraswat K C 2008 IEEE Electron Dev. Lett. 29 328
[15] Ichimura S, Kurokawa A and Nakamura K 2000 Thin Solid Films 377 518
[16] Kim Y K, Lee S H, Choi J S, Park H B, Seo Y D, Chin K H, Kim D, Lim J S, Kim W D, Nam K J, Cho M H, Hwang K H, Kim Y S, Kim S S, Park Y W, Moon J T, Lee S I and Lee M Y 2000 Tech. Dig. - Int. Electron Devices Meet. 369
[17] Perevalov T V, Tereshenko O E, Gritsenko V A, Pustovarov V A, Yelisseyev A P, Park C, Han J H and Lee C 2010 J. Appl. Phys. 108 013501
[18] Besling W F A, Young E, Conard T, Zhao C, Carter R, Vandervorst W, Caymax M, Gendt S D, Heyns M, Maes J, Tuominen M and Haukka S 2002 J. Non-Cryst. Solids 303 123
[19] Ramanathan S, Chi D, McIntyre P C, Wetteland C J and Tesmer J R 2003 J. Electrochem. Soc. 150 F110
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