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Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation |
Sun Jia-Bao (孙家宝)a b, Yang Zhou-Wei (杨周伟)a, Geng Yang (耿阳)b, Lu Hong-Liang (卢红亮)b, Wu Wang-Ran (吴汪然)a, Ye Xiang-Dong (叶向东)a, David Zhang Wei (张卫)b, Shi Yi (施毅)a, Zhao Yi (赵毅)a c |
a School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China; b State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China; c State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China |
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Abstract Aluminum-oxide films deposited as gate dielectrics on germanium (Ge) by atomic layer deposition (ALD) were post oxidized in an ozone atmosphere. No additional interfacial layer was detected by the high-resolution cross-sectional transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) measurements made after the ozone post oxidation (OPO) treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment.
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Received: 15 September 2012
Revised: 19 December 2012
Accepted manuscript online:
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PACS:
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77.55.D-
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61.72.uf
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(Ge and Si)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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68.47.Fg
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(Semiconductor surfaces)
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Fund: Project supported by the National Program on Key Basic Research Projects (973 Program) of China (Grant No. 2011CBA00607), the National Natural Science Foundation of China (Grant Nos. 61106089 and 51102048), the National Science and Technology Major Projects (Grant No. 2009ZX02035), the State Key Laboratory of ASIC and System Project (Grant No. 11MS017), and the Open Funds of State Key Laboratory of ASIC and System at Fudan University (Grant No. 10KF001). |
Corresponding Authors:
Lu Hong-Liang, Zhao Yi
E-mail: honglianglu@fudan.edu.cn; yzhao@nju.edu.cn
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Cite this article:
Sun Jia-Bao (孙家宝), Yang Zhou-Wei (杨周伟), Geng Yang (耿阳), Lu Hong-Liang (卢红亮), Wu Wang-Ran (吴汪然), Ye Xiang-Dong (叶向东), David Zhang Wei (张卫), Shi Yi (施毅), Zhao Yi (赵毅) Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation 2013 Chin. Phys. B 22 067701
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