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Chin. Phys. B, 2013, Vol. 22(5): 057202    DOI: 10.1088/1674-1056/22/5/057202
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers

Ren Sheng-Dong (任胜东)ab, Li Bin-Cheng (李斌成)a, Gao Li-Feng (高丽峰)a, Wang Qian(王谦)ab
a Institute of Optics and Electronics, Chinese Academy of Sciences, Sichuan 610209, China;
b University of the Chinese Academy of Sciences, Beijing 100039, China
Abstract  A combined frequency-swept and quasi-time-domain photocarrier radiometry (PCR) technique was developed to characterize thermally annealed silicon wafers with B+, P+, and As+ ion implantation at doses ranging from 1×1011 cm-2 to 1×1016 cm-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and lifetime extracted from the transient PCR signals.
Keywords:  photocarrier radiometry      ion implantation      effective lifetime      silicon  
Received:  05 November 2012      Revised:  03 December 2012      Accepted manuscript online: 
PACS:  72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)  
  78.55.Ap (Elemental semiconductors)  
  73.20.Hb (Impurity and defect levels; energy states of adsorbed species)  
  73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60676058 and 61076090).
Corresponding Authors:  Li Bin-Cheng     E-mail:  bcli@ioe.ac.cn

Cite this article: 

Ren Sheng-Dong (任胜东), Li Bin-Cheng (李斌成), Gao Li-Feng (高丽峰), Wang Qian (王谦) Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers 2013 Chin. Phys. B 22 057202

[1] Ng W L, Lourenço M A, Gwilliam R M, Ledain S, Shao G and Homewood K P 2001 Nature 410 192
[2] Lourenço M A, Siddiqui M S A, Shao G, Gwilliam R M and Homewood K P 2004 Phys. Stat. Sol. (a) 201 239
[3] Wang C, Yang Y, Yang R D, Li L, Xiong F and Bao J M 2011 Chin. Phys. B 20 026802
[4] Lourenço M A, Milosavljević M, Shao G, Gwilliam R M and Homewood K P 2006 Thin Solid Films 504 36
[5] Kveder V, Badylevich M, Steinman E, Izotov A, Seibt M and Schröter W 2004 Appl. Phys. Lett. 84 2106
[6] Mandelis A, Batista J and Shaughnessy D 2003 Phys. Rev. B 67 205208
[7] Li B C, Shaughnessy D, Mandelis A, Batista J and Garcia J 2004 J. Appl. Phys. 96 186
[8] Liu X M, Li B C and Huang Q P 2010 Chin. Phys. B 19 097201
[9] Huang Q P and Li B C 2011 J. Appl. Phys. 109 023708
[10] Huang Q P and Li B C 2012 J. Appl. Phys. 111 093729
[11] Shaughnessy D, Li B C, Mandelis A and Batista J 2004 Appl. Phys. Lett. 84 5219
[12] Huang Q P and Li B C 2011 Rev. Sci. Instrum. 82 043104
[13] Nastasi M and Mayer J W 2006 Ion Implantation and Synthesis of Materials (Berlin: Springer-Verlag)
[14] Stowe D, Fraser K, Galloway S, Senkader S, Falster R and Wilshaw P 2006 Microscopy of Semiconducting Materials: Proceedings of the 14th conference Oxford, UK, April 11-14, 2005 p. 335
[15] Palik E D 1998 Handbook of Optical Constants of Solids Vols. I and III (San Diego: Academic)
[16] Ziegler J F, Biersack J P and Littmark U 1985 The Stopping Range of Ions in Solids (Tarrytown: Pergamon); Ziegler J F 2006 http://www.srim.org
[17] Jain S C, Schenmaker W, Lindsay R, Stak P A, Decoutere S, Willander M and Maes H E 2002 J. Appl. Phys. 91 8919
[18] Shao L, Liu J, Chen Q Y and Chu W K 2003 Mater. Sci. Eng. R 42 65
[19] Jones K S, Prussin S and Weber E R 1988 Appl. Phys. A: Solids Surf. 45 1
[20] Milosavljević M, Lourenco M A, Gwilliam R M and Homewood K P 2005 J. Appl. Phys. 97 073512
[21] Pan G Z, Ostroumov R P, Lian Y G, Tu K N and Wang K L 2004 Electron Devices Meeting Yokohama, Japan, December 13-15, 2004 pp. 343-346
[22] Pelaz L, Marqués L A and Barbolla J 2004 J. Appl. Phys. 96 5947
[23] Opsal J, Taylor M W, Smith W L and Rosencwaig A 1987 J. Appl. Phys. 61 240
[24] Rodriguez M E, Garcia J A, Mandelis A, Jean C and Riopel Y 1999 Appl. Phys. Lett. 74 2429
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