Engineering of electronic and optical properties of ZnO thin films via Cu doping

doi:10.1088/1674-1056/22/4/047803

Abstract ZnO thin films doped with different Cu concentrations are fabricated by reactive magnetron sputtering technique. XRD analysis indicates that the crystal quality of the ZnO:Cu film can be enhanced by moderate level of Cu-doping in the sputtering process. The results of XPS spectra of zinc, oxygen, and copper elements show that Cu-doping has an evident and complicated effect on the chemical state of oxygen, but little effect on those of zinc and copper. Interestingly, further investigation of the optical properties of ZnO:Cu samples shows that the transmittance spectra exhibit both red shift and blue shift with the increase of Cu doping, in contrast to the simple monotonic behavior of Burstein-Moss effect. Analysis reveals that this is due to the competition between oxygen vacancies and intrinsic and surface states of oxygen in the sample. Our result may suggest an effective way of tuning the bandgap of ZnO samples.

Keywords: ZnO thin films Cu doping optical properties bandgap tuning

Received: 06 December 2012
Revised: 30 December 2012
Accepted manuscript online:

PACS:	78.40.Fy	(Semiconductors)
	78.55.Et	(II-VI semiconductors)
	78.66.Hf	(II-VI semiconductors)

Fund: Project supported by the Natural Science Foundation of Gansu Province, China (Grant No. 0803RJZA008), the Fundamental Research Funds for the Central Universities, China (Grant No. zyz2012057), the National Natural Science Foundation of China (Grant No. 11004141), and the Program for New Century Excellent Talents in University, China (Grant No. 11-0351).

Corresponding Authors: Xiang Gang
E-mail: gxiang@scu.edu.cn

Cite this article:

Zhang Guo-Heng (张国恒), Deng Xiao-Yan (邓小燕), Xue Hua (薛华), Xiang Gang (向钢) Engineering of electronic and optical properties of ZnO thin films via Cu doping 2013 Chin. Phys. B 22 047803

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