CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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High-power SiC MESFET using dual p-buffer layer for S-band power amplifier |
Deng Xiao-Chuan (邓小川), Sun He (孙鹤), Rao Cheng-Yuan (饶成元), Zhang Bo (张波) |
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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Abstract Silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to the process for S-band power amplifier. The lower doped upper-buffer layer serves to maintain the channel current, while the higher doped lower-buffer layer is used to provide excellent electron confinement in the channel layer. A 20-mm gate periphery SiC MESFET biased at a drain voltage of 85 V demonstrates a pulsed wave saturated output power of 94 W, a linear gain of 11.7 dB, and a maximum power added efficiency of 24.3% at 3.4 GHz. These results are improved compared with those of the conventional single p-buffer MESFET fabricated in this work using the same process. A radio-frequency power output greater than 4.7 W/mm is achieved, showing the potential as a high-voltage operation device for high-power solid-state amplifier applications.
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Received: 18 May 2012
Revised: 20 June 2012
Accepted manuscript online:
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PACS:
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73.40.Sx
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(Metal-semiconductor-metal structures)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61076072). |
Corresponding Authors:
Deng Xiao-Chuan
E-mail: xcdeng@uestc.edu.cn
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Cite this article:
Deng Xiao-Chuan (邓小川), Sun He (孙鹤), Rao Cheng-Yuan (饶成元), Zhang Bo (张波) High-power SiC MESFET using dual p-buffer layer for S-band power amplifier 2013 Chin. Phys. B 22 017302
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