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Chin. Phys. B, 2013, Vol. 22(1): 017302    DOI: 10.1088/1674-1056/22/1/017302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

High-power SiC MESFET using dual p-buffer layer for S-band power amplifier

Deng Xiao-Chuan (邓小川), Sun He (孙鹤), Rao Cheng-Yuan (饶成元), Zhang Bo (张波)
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract  Silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to the process for S-band power amplifier. The lower doped upper-buffer layer serves to maintain the channel current, while the higher doped lower-buffer layer is used to provide excellent electron confinement in the channel layer. A 20-mm gate periphery SiC MESFET biased at a drain voltage of 85 V demonstrates a pulsed wave saturated output power of 94 W, a linear gain of 11.7 dB, and a maximum power added efficiency of 24.3% at 3.4 GHz. These results are improved compared with those of the conventional single p-buffer MESFET fabricated in this work using the same process. A radio-frequency power output greater than 4.7 W/mm is achieved, showing the potential as a high-voltage operation device for high-power solid-state amplifier applications.
Keywords:  dual p-buffer layer      silicon carbide      MESFETs      electron confinement  
Received:  18 May 2012      Revised:  20 June 2012      Accepted manuscript online: 
PACS:  73.40.Sx (Metal-semiconductor-metal structures)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61076072).
Corresponding Authors:  Deng Xiao-Chuan     E-mail:  xcdeng@uestc.edu.cn

Cite this article: 

Deng Xiao-Chuan (邓小川), Sun He (孙鹤), Rao Cheng-Yuan (饶成元), Zhang Bo (张波) High-power SiC MESFET using dual p-buffer layer for S-band power amplifier 2013 Chin. Phys. B 22 017302

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