Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

doi:10.1088/1674-1056/26/10/107301

Abstract

In this work, we use a 3-nm-thick Al_0.64In_0.36N back-barrier layer in In_0.17Al_0.83N/GaN high-electron mobility transistor (HEMT) to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al_0.64In_0.36N back-barrier on the direct-current (DC) and radio-frequency (RF) characteristics of InAlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick Al_0.64In_0.36N back-barrier and no parasitic electron channel is formed. Comparing with the conventional InAlN/GaN HEMT, the electron confinement of the back-barrier HEMT is significantly improved, which allows a good immunity to short-channel effect (SCE) for gate length decreasing down to 60 nm (9-nm top barrier). For a 70-nm gate length, the peak current gain cut-off frequency (f_T) and power gain cut-off frequency (f_max) of the back-barrier HEMT are 172 GHz and 217 GHz, respectively, which are higher than those of the conventional HEMT with the same gate length.

Keywords: InAlN/GaN HEMT back barrier electron confinement short-channel effect (SCE)

Received: 19 April 2017
Revised: 24 June 2017
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	85.30.Tv	(Field effect devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund:

Project supported by the Natural Science Foundation of Hebei Province, China (Grant No. F2013202256).

Corresponding Authors: Hong-Dong Zhao
E-mail: zhaohd@hebut.edu.cn

Cite this article:

Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Lei Yang(杨磊), Yang Wang(王杨) Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier 2017 Chin. Phys. B 26 107301

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Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

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