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Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge |
Hu Bo (胡波), Huang Shi-Hua (黄仕华), Wu Feng-Min (吴锋民) |
Physics Department, Zhejiang Normal University, Jinhua 321004, China |
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Abstract A model based on analysis of self-consistent Poisson-Schrodinger equation is proposed to investigate the tunneling current of electrons in the inversion layer of a p-type metal-oxide-semiconductor (MOS) structure. In this model, the influences of interface trap charge (ITC) at the Si-SiO2 interface and fixed oxide charge (FOC) in the oxide region are taken into account, and one-band effective mass approximation is used. The tunneling probability is obtained by employing the transfer matrix method. Further, the effects of in-plane momentum on the quantization in the electron motion perpendicular to the Si-SiO2 interface of a MOS device are investigated. Theoretical simulation results indicate that both ITC and FOC have great influence on the tunneling current through a MOS structure when their densities are larger than 1012 cm-2, which results from the great change of bound electrons near the Si-SiO2 interface and the oxide region. Therefore, for real ultrathin MOS structures with ITC and FOC, this model can give a more accurate description for tunneling current in the inversion layer.
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Received: 09 June 2012
Revised: 09 July 2012
Accepted manuscript online:
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PACS:
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73.40.Jn
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(Metal-to-metal contacts)
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73.50.-h
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(Electronic transport phenomena in thin films)
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61.72.-y
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(Defects and impurities in crystals; microstructure)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61076055), the Program for Innovative Research Team of Zhejiang Normal University of China (Grant No. 2007XCXTD-5), and the Open Program of Surface Physics Laboratory of Fudan University, China (Grant No. FDS KL2011_04). |
Corresponding Authors:
Huang Shi-Hua
E-mail: huangshihua@zjnu.cn
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Cite this article:
Hu Bo (胡波), Huang Shi-Hua (黄仕华), Wu Feng-Min (吴锋民) Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge 2013 Chin. Phys. B 22 017301
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