Injection modulation of p+–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base

doi:10.1088/1674-1056/26/10/108505

Abstract To overcome hole-injection limitation of p⁺-n emitter junction in 4H-SiC light triggered thyristor, a novel high-voltage 4H-SiC light triggered thyristor with double-deck thin n-base structure is proposed and demonstrated by two-dimensional numerical simulations. In this new structure, the conventional thin n-base is split to double-deck. The hole-injection of p⁺-n emitter junction is modulated by modulating the doping concentration and thickness of upper-deck thin n-base. With double-deck thin n-base, the current gain coefficient of the top pnp transistor in 4H-SiC light triggered thyristor is enhanced. As a result, the triggering light intensity and the turn-on delay time of 4H-SiC light triggered thyristor are both reduced. The simulation results show that the proposed 10-kV 4H-SiC light triggered thyristor is able to be triggered on by 500-mW/cm² ultraviolet light pulse. Meanwhile, the turn-on delay time of the proposed thyristor is reduced to 337 ns.

Keywords: silicon carbide light triggered thyristor double-deck thin n-base injection modulation

Received: 09 June 2017
Revised: 27 July 2017
Accepted manuscript online:

PACS:	85.30.Rs	(Thyristors)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.60.Bt	(Optoelectronic device characterization, design, and modeling)
	02.60.Cb	(Numerical simulation; solution of equations)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51677149).

Corresponding Authors: Hongbin Pu
E-mail: puhongbin@xaut.edu.cn

Cite this article:

Xi Wang(王曦), Hongbin Pu(蒲红斌), Qing Liu(刘青), Chunlan Chen(陈春兰), Zhiming Chen(陈治明) Injection modulation of p⁺–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base 2017 Chin. Phys. B 26 108505

[1]	Wang J and Huang A Q 2009 IEEE Trans. Power Electron. 242013861
[2]	Cao L, Pu H B, Chen Z M and Zang Y 2012 Chin. Phys. B 21 017303
[3]	Song Q W, Tang X Y, Yuan H, Wang Y H, Zhang Y M, Guo H, Jia R X, Lv H L, Zhang Y M and Zhang Y M 2016 Chin. Phys. B 25047102
[4]	Schrock J A, Hirsch E A, Lacouture S, Kelley et al. 2016 IEEE Trans. Power Electron. 312574625
[5]	Chow T P 2014 Mater. Sci. Forum 7781077
[6]	Zhou C N, Wang Y, Yue R F et al. 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) 7785296
[7]	Hasegawa J, Pace L, Phung L V, Hatano M and Planson D 2017 IEEE Trans. Electron Dev. 642657223
[8]	Wang W, Yan X Y, Xiong J, et al. 2016 IEEE International Conference on High Voltage Engineering and Application (ICHVE) 7800751
[9]	Levinshtein M E, Ivanov P A, Agarwal A K and Palmour J W 2002 Electron. Lett. 38 0415
[10]	Liu W T, Chen Z M and Li L B 2012 7 th International Conference on System of Systems Engineering (SoSE) pp.171-174
[11]	Hossein R, Alireza M, Arash R, et al. 2015 IEEE Applied Power Electronics Conference and Exposition (APEC) 7104507
[12]	Mnatsakanov T T, Yurkov S N, Levinshtein M E, et al. 2014 Semicond Sci. Technol. 29 055005
[13]	Levinshtein M E, Mnatsakanov T T, Agarwal A K, et al. 2011 Semi-cond. Sci. Technol. 26 055024
[14]	Dheilly N, Pâques G, Scharnholz S, Bevilacqua P, et al. 2011 Electron. Lett. 477041
[15]	Rumyantsev S L, Levinshtein M E, Shur M S, et al. 2013 Semicond. Sci. Technol. 28 125017
[16]	Yurkov S N, Mnatsakanov T T, Levinshtein M E, et al. 2014 Semicond. Sci. Technol. 29 125012
[17]	Levinshtein M E, Rumyantsev S L, Shur M S, et al. 2013 Semicond. Sci. Technol. 28 015008
[18]	Baliga B J 2008 Fundamentals of Power Semiconductor Devices (Springer US)
[19]	Streetman B G and Banerjee S 1972 Solid-State Electronic Devices (Prentice-Hall)

[1]	Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Chin. Phys. B, 2023, 32(2): 028504.
[2]	Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure Xinxin Zuo(左欣欣), Jiang Lu(陆江), Xiaoli Tian(田晓丽), Yun Bai(白云), Guodong Cheng(成国栋), Hong Chen(陈宏), Yidan Tang(汤益丹), Chengyue Yang(杨成樾), and Xinyu Liu(刘新宇). Chin. Phys. B, 2022, 31(9): 098502.
[3]	A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). Chin. Phys. B, 2022, 31(7): 078501.
[4]	Assessing the effect of hydrogen on the electronic properties of 4H-SiC Yuanchao Huang(黄渊超), Rong Wang(王蓉), Yiqiang Zhang(张懿强), Deren Yang(杨德仁), and Xiaodong Pi(皮孝东). Chin. Phys. B, 2022, 31(5): 056108.
[5]	Construction and mechanism analysis on nanoscale thermal cloak by in-situ annealing silicon carbide film Jian Zhang(张健), Hao-Chun Zhang(张昊春), Zi-Liang Huang(黄子亮), Wen-Bo Sun(孙文博), and Yi-Yi Li(李依依). Chin. Phys. B, 2022, 31(1): 014402.
[6]	Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes Ying-Ying Yang(杨莹莹), Pei Gong(龚裴), Wan-Duo Ma(马婉铎), Rui Hao(郝锐), and Xiao-Yong Fang(房晓勇). Chin. Phys. B, 2021, 30(6): 067803.
[7]	Improved 4H-SiC UMOSFET with super-junction shield region Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), Cheng-Hao Yu(于成浩), and Fei Cao(曹菲). Chin. Phys. B, 2021, 30(5): 058502.
[8]	Conductance and dielectric properties of hydrogen and hydroxyl passivated SiCNWs Wan-Duo Ma(马婉铎), Ya-Lin Li(李亚林), Pei Gong(龚裴), Ya-Hui Jia(贾亚辉), and Xiao-Yong Fang(房晓勇). Chin. Phys. B, 2021, 30(10): 107801.
[9]	Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension Zheng-Xin Wen(温正欣), Feng Zhang(张峰), Zhan-Wei Shen(申占伟), Jun Chen(陈俊), Ya-Wei He(何亚伟), Guo-Guo Yan(闫果果), Xing-Fang Liu(刘兴昉), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平). Chin. Phys. B, 2019, 28(6): 068504.
[10]	Investigations on mesa width design for 4H-SiC trench super junction Schottky diodes Xue-Qian Zhong(仲雪倩), Jue Wang(王珏), Bao-Zhu Wang(王宝柱), Heng-Yu Wang(王珩宇), Qing Guo(郭清), Kuang Sheng(盛况). Chin. Phys. B, 2018, 27(8): 087102.
[11]	Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection Xin Ye(叶鑫), Xiao-Chuan Xia(夏晓川), Hong-Wei Liang(梁红伟), Zhuo Li(李卓), He-Qiu Zhang(张贺秋), Guo-Tong Du(杜国同), Xing-Zhu Cui(崔兴柱), Xiao-Hua Liang(梁晓华). Chin. Phys. B, 2018, 27(8): 087304.
[12]	Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile Xi Wang(王曦), Hong-Bin Pu(蒲红斌), Qing Liu(刘青), Li-Qi An(安丽琪). Chin. Phys. B, 2018, 27(10): 108502.
[13]	Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study Wenbo Li(李文波), Ling Li(李玲), Fangfang Wang(王方方), Liu Zheng(郑柳), Jinghua Xia(夏经华), Fuwen Qin(秦福文), Xiaolin Wang(王晓琳), Yongping Li(李永平), Rui Liu(刘瑞), Dejun Wang(王德君), Yan Pan(潘艳), Fei Yang(杨霏). Chin. Phys. B, 2017, 26(3): 037104.
[14]	Numerical and experimental study of the mesa configuration in high-voltage 4H-SiC PiN rectifiers Xiao-Chuan Deng(邓小川), Xi-Xi Chen(陈茜茜), Cheng-Zhan Li(李诚瞻), Hua-Jun Shen(申华军), Jin-Ping Zhang(张金平). Chin. Phys. B, 2016, 25(8): 087201.
[15]	Design and optimization of a SiC thermal emitter/absorber composed of periodic microstructures based on a non-linear method Wang Wei-Jie (王卫杰), Zhao Zhen-Guo (赵振国), Zhao Yi (赵艺), Zhou Hai-Jing (周海京), Fu Ce-Ji (符策基). Chin. Phys. B, 2015, 24(9): 094213.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Injection modulation of p+–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base

Cite this article:

Online attention

Injection modulation of p⁺–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base