Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide

doi:10.1088/1674-1056/21/11/116104

Abstract Nitrogen ions of various doses are implanted into the buried oxide (BOX) of commercial silicon-on-insulator (SOI) materials, and subsequent annealings are carried out at various temperatures. The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by high frequency capacitance-voltage (C-V) technique after irradiation using a Co-60 source. It is found that there exist relatively complex relationships between the radiation hardness of the nitrogen implanted BOX and the nitrogen implantation dose at different irradiation doses. The experimental results also suggest that a lower dose nitrogen implantation and a higher post-implantation annealing temperature are suitable for improving the radiation hardness of SOI wafer. Based on the measured C-V data, secondary ion mass spectrometry (SIMS), and Fourier transform infrared (FTIR) spectroscopy, the total dose responses of the nitrogen-implanted SOI wafers are discussed.

Keywords: silicon-on-insulator total dose radiation hardness nitrogen implantation

Received: 30 March 2012
Revised: 03 May 2012
Accepted manuscript online:

PACS:	61.82.-d	(Radiation effects on specific materials)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	61.72.U-	(Doping and impurity implantation)

Corresponding Authors: Zheng Zhong-Shan
E-mail: zszheng513@163.com

Cite this article:

Zheng Zhong-Shan (郑中山), Liu Zhong-Li (刘忠立), Yu Fang (于芳), Li Ning (李宁 ) Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide 2012 Chin. Phys. B 21 116104

[1]	Kuo J B and Lin S C 2001 Low-Voltage SOI CMOS VLSI Devices and Circuits (New York: Wiley)
[2]	Colinge J P 1991 Silicon-on-Insulator Technology: Materials to VLSI (Boston: Kluwer)
[3]	Mikawa R E and Ackerman M R 1987 IEEE Trans. Nucl. Sci. 34 1698
[4]	Musseau O, Leray J L and Ferlet-Cavrois V 1994 IEEE Trans. Nucl. Sci. 41 607
[5]	Schwank J R, Shaneyfelt M R, Dodd P E, Ferlet-Cavrois V, Loemker R A, Winokur P S, Fleetwood D M, Paillet P, Leray J L, Draper B L, Witczak S C and Riewe L C 2000 IEEE Trans. Nucl. Sci. 47 2175
[6]	Mayer D C 1990 IEEE Trans. Electron. Dev. 37 1280
[7]	Ferlet-Cavrois V, Musseau O, Leray J L, Pelloie J L and Raynaud C 1997 IEEE Trans. Electron. Dev. 44 965
[8]	Ferlet-Cavrois V, Colladant T, Paillet P, Leray J L, Musseau O, Schwank J R, Shaneyfelt M R, Pelloie J L and du Port de Poncharra J 2000 IEEE Trans. Nucl. Sci. 47 2183
[9]	Barchuk I P, Kilchitskaya V I, Lysenko V S, Nazarov A N, Rudenko T E, Djurenko S V, Rudenko A N, Yurchenko A P, Ballutaud D and Colinge J P 1997 IEEE Trans. Nucl. Sci. 44 2542
[10]	Yi W B, zhang E X, Chen M, Li N, Zhang G Q, Liu Z L and Wang X 2004 Semicond. Sci. Technol. 19 571
[11]	Yang H, Zhang E X and Zhang Z X 2007 Chin. J. Semi. 28 323
[12]	Wu A M, Chen J, Zhang E X, Wang X and Zhang Z X 2008 Semicond. Sci. Technol. 23 015015
[13]	Zhang S, Zhang Z X, Bi D, Chen M, Tian H, Yu W J, Wang R and Liu Z L 2009 J. Semicond. 30 093002
[14]	Bi D W, Zhang Z X, Zhang S, Chen M, Yu W J, Wang R, Tian H and Liu Z L 2009 Chin. Phys. C 33 866
[15]	Zhang E X, Sun J Y, Chen J, Zhang Z X and Wang X 2005 J. Elec. Mat. 34 L53
[16]	Tang H M, Zheng Z S, Zhang E X, Yu F, Li N and Wang N J 2010 Chin. Phys. B 19 106106
[17]	Sze S M 1985 Semiconductor Devices Physics and Technology (New York: Wiley)
[18]	Nicollian E H and Goetzberger A 1965 IEEE Trans. Electron. Dev. 12 108
[19]	Tang H M, Zheng Z S, Zhang E X and Yu F 2011 Acta Phys. Sin. 60 056104 (in Chinese)
[20]	Lelis A J, Oldham T R, Boesch H E and Jr McLean F B 1989 IEEE Trans. Nucl. Sci. 36 1808
[21]	Morokov Yu N, Novikov Yu N, Gritsenko V A and Wong H 1999 Microelectron. Eng. 48 175
[22]	Chauhan A R, Bhatt G, Yadav A D, Dubey S K and Gundu Rao T K 2003 Nucl. Instr. Meth. B 212 451
[23]	Yadav A D and Joshi M C 1979 Thin Solid Films 59 313

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Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide

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