Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique
Yang Li-Yuan(杨丽媛)a)†, Xue Xiao-Yong(薛晓咏) a), Zhang Kai(张凯)a) Zheng Xue-Feng(郑雪峰)a), Ma Xiao-Hua(马晓华) a)b), and Hao Yue(郝跃)a)
a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; b School of Technical Physics, Xidian University, Xi'an 710071, China
Abstract Self-heating in multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of AlGaN/GaN HEMT is estimated from the calibration curve of passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1 ℃ is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.
Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00600), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250006).
Corresponding Authors:
Yang Li-Yuan
E-mail: gezhistudent@163.com
Cite this article:
Yang Li-Yuan(杨丽媛), Xue Xiao-Yong(薛晓咏), Zhang Kai(张凯) Zheng Xue-Feng(郑雪峰), Ma Xiao-Hua(马晓华), and Hao Yue(郝跃) Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique 2012 Chin. Phys. B 21 077304
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