Novel photoluminescence properties of InAlO3(ZnO)m superlattice nanowires

doi:10.1088/1674-1056/20/7/078101

Abstract One-dimension InAlO₃(ZnO)_m superlattice nanowires were successfully synthesized via chemical vapor deposition. Transmission electron microscopy measurements reveal that the nanowires have a periodic layered structure along the 〈0001〉 direction. The photoluminescence properties of InAlO₃(ZnO)_m superlattice nanowires are studied for the first time. The near-band-edge emissions exhibit an obvious red shift due to the formation of the localized tail states. The two peaks centered at 3.348 eV and 3.299 eV indicate a lever phenomenon at the low-temperature region. A new luminescence mechanism is proposed, combined with the special energy band structure of InAlO₃(ZnO)_m.

Keywords: InAlO₃(ZnO)_m superlattice nanowires photoluminescence energy band structure

Received: 19 January 2011
Revised: 16 February 2011
Accepted manuscript online:

PACS:	81.07.Vb	(Quantum wires)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	78.67.Pt	(Multilayers; superlattices; photonic structures; metamaterials)

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Liu Xin(刘欣), Huang Dong-Liang(黄东亮), Wu Li-Li(武立立), Zhang Xi-Tian(张喜田), and Zhang Wei-Guang(张伟光) Novel photoluminescence properties of InAlO₃(ZnO)_m superlattice nanowires 2011 Chin. Phys. B 20 078101

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Novel photoluminescence properties of InAlO3(ZnO)m superlattice nanowires

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Novel photoluminescence properties of InAlO₃(ZnO)_m superlattice nanowires