Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states

doi:10.1088/1674-1056/20/11/116803

Abstract We report a model of the carrier transport and the subgap density of states in a polycrystalline ZnO film for simulating a polycrystalline ZnO thin film transistor. This simple model considering the deep and the band tail states reproduces well the characteristics of polycrystalline ZnO thin film transistors. Furthermore, using the developed model, we study the effects of defect parameters on the electrical performances of the polycrystalline ZnO thin film transistors.

Keywords: modeling ZnO thin film transistor deep state band tail

Received: 13 April 2011
Revised: 30 June 2011
Accepted manuscript online:

PACS:	68.60.-p	(Physical properties of thin films, nonelectronic)
	73.50.-h	(Electronic transport phenomena in thin films)
	73.61.-r	(Electrical properties of specific thin films)

Fund: Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250001).

Cite this article:

Gao Hai-Xia(高海霞), Hu Rong(胡榕), and Yang Yin-Tang(杨银堂) Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states 2011 Chin. Phys. B 20 116803

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Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states

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