Band alignment of Ga2O3/6H-SiC heterojunction

doi:10.1088/1674-1056/20/11/116101

Abstract A high-quality Ga₂O₃ thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga₂O₃/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy. The energy band diagram of the Ga₂O₃/6H-SiC heterojunction is obtained by analysing the binding energies of Ga 3d and Si 2p at the surface and the interface of the heterojunction. The valence band offset is experimentally determined to be 2.8 eV and the conduction band offset is calculated to be 0.89 eV, which indicate a type-II band alignment. This provides useful guidance for the application of Ga₂O₃/6H-SiC electronic devices.

Keywords: band alignment Ga₂O₃/6H-SiC synchrotron radiation photoelectron spectroscopy

Received: 19 March 2011
Revised: 22 June 2011
Accepted manuscript online:

PACS:	61.30.Hn	(Surface phenomena: alignment, anchoring, anchoring transitions, surface-induced layering, surface-induced ordering, wetting, prewetting transitions, and wetting transitions)
	68.47.Fg	(Semiconductor surfaces)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 50702071 and 50772122) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176).

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Chang Shao-Hui(常少辉), Chen Zhi-Zhan(陈之战), Huang Wei(黄维), Liu Xue-Chao(刘学超), Chen Bo-Yuan(陈博源), Li Zheng-Zheng(李铮铮), and Shi Er-Wei(施尔畏) Band alignment of Ga₂O₃/6H-SiC heterojunction 2011 Chin. Phys. B 20 116101

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Band alignment of Ga₂O₃/6H-SiC heterojunction