Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

doi:10.1088/1674-1056/20/10/108501

Abstract In this paper, we investigate an Al₂O₃/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al₂O₃/HfO₂ stack as the blocking layer, the sample with the Al₂O₃/HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al₂O₃/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.

Keywords: charge trapping flash blocking layer stack

Received: 25 April 2011
Revised: 07 June 2011
Accepted manuscript online:

PACS:

85.30.-z

(Semiconductor devices)

Fund: Project supported partially by the National Basic Research Program of China (Grant No. 2010CB934204), the National Natural Science Foundation of China (Grant No. 60825403), the Director’s Fund of Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS), and the National Science and Technology Major Project of China (Grant No. 2009ZX02023-005).

Cite this article:

Zheng Zhi-Wei(郑志威), Huo Zong-Liang(霍宗亮), Zhu Chen-Xin(朱晨昕), Xu Zhong-Guang(许中广), Liu Jing(刘璟), and Liu Ming(刘明) Improved charge trapping flash device with Al₂O₃/HfSiO stack as blocking layer 2011 Chin. Phys. B 20 108501

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Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

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Improved charge trapping flash device with Al₂O₃/HfSiO stack as blocking layer