Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors

doi:10.1088/1674-1056/19/4/047301

Abstract This paper investigates the impact of electrical degradation and current collapse on different thickness SiN_x passivated AlGaN/GaN high electron mobility transistors. It finds that higher thickness SiN_x passivation can significantly improve the high-electric-field reliability of a device. The degradation mechanism of the SiN_x passivation layer under ON-state stress has also been discussed in detail. Under the ON-state stress, the strong electric-field led to degradation of SiN_x passivation located in the gate-drain region. As the thickness of SiN_x passivation increases, the density of the surface state will be increased to some extent. Meanwhile, it is found that the high NH₃ flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse.

Keywords: SiN_x passivated AlGaN/GaN high electron mobility transistors degradation current collapse surface states

Received: 16 June 2009
Revised: 04 August 2009
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.65.Rv	(Passivation)
	73.50.Fq	(High-field and nonlinear effects)

Fund: Project supported by the State Key Program of National Natural Science Foundation of China (Grant No.~60736033).

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Yang Ling(杨凌), Hu Gui-Zhou(胡贵州), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Quan Si(全思), Yang Li-Yuan(杨丽媛), and Jiang Shou-Gao(姜守高) Electric-stress reliability and current collapse of different thickness SiN_x passivated AlGaN/GaN high electron mobility transistors 2010 Chin. Phys. B 19 047301

[1]	Uemoto Y, Shibata D, Yanagihara M, Ishida H, Matsuo H, Nagai S, Batta N, Ming L, Ueda T and Tanaka T 2007 IEEE IEDM Tech. Digest}. 861
[2]	Wu Y F, Kapolnex D and Ibbetson J P 2007 IEEE IEDM Tech. Digest}. 405
[3]	Jimenez J L, Chowdhury U, Kao M Y, Balistreri A, Lee C, Saunier P and Chao P C 2008 IEEE Int. Rel. Phys. Symp. Proceedings
[4]	Joh J and Alamo J A 2006 IEEE IEDM Tech. Digest}. 415
[5]	Joh J and Alamo J A 2008 IEEE Electron Dev. Lett. 29 287
[6]	Zanoni E, Meneghesso G, Verzuesi G and Danesin F 2007 IEEE IEDM Tech. Digest}. 381
[7]	Gu W P, Duan H T, Ni J Y, Hao Y, Zhang J C, Feng Q and Ma X H 2009 Chin. Phys. B 18 1601
[8]	Wei W, Lin R B, Hao Y and Feng Q 2008 Chin. Phys. B 17 467
[9]	Gu W P, Hao Y, Zhang J C, Wang C, Feng Q and Ma X H 2009 Acta Phys. Sin. 58 511 (in Chinese)
[10]	Mittereder J A, Binari S C, Klein P B, Roussos J A, Katzer D S and Storm D F 2003 Appl. Phys. Lett. 83 1650
[11]	Sozza A, Dua C, Morvan E, Delage S, Rampazzo F, Tazzoli A, Danesin F and Meneghesso G 2005 IEEE IEDM Tech. Digest}. 590
[12]	Sarua A, Ji H, Kuball M, Uren M J, Martin T, Nash K J, Hilton K P and Balmer R S 2006 Appl. Phys. Lett. 88 103502
[13]	Binari S C, Klein P B and Kazior T E 2002 Proc. IEEE 9 1048
[14]	Kikkawa T, Nagahara M, Okamoto N, Tateno Y, Yamaguchi Y, Hara N, Joshin K and Asbeck P M 2001 IEEE IEDM Tech. Digest}. 585
[15]	Dieci D, Sozzi G, Menozzi R, Tediosi E, Lanzieri C and Canali C 2001 IEEE Trans. Electron Devices 48 1929
[16]	Menozzi R, Cova P, Canali C and Fantini F 1996 IEEE Trans. Electron Devices 43 543
[17]	Schroder D K 2006 Semiconductor Material and Device Characterization} 3rd ed. (Hoboken: Wiley NJ)

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Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors

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Electric-stress reliability and current collapse of different thickness SiN_x passivated AlGaN/GaN high electron mobility transistors