Abstract Hole-net structure silicon is fabricated by laser irradiation and annealing, on which a photoluminescence (PL) band in a the region of 650--750 nm is pinned and its intensity increases obviously after oxidation. It is found that the PL intensity changes with both laser irradiation time and annealing time. Calculations show that some localized states appear in the band gap of the smaller nanocrystal when Si=O bonds or Si--O--Si bonds are passivated on the surface. It is discovered that the density and the number of Si=O bonds or Si--O--Si bonds related to both the irradiation time and the annealing time obviously affect the generation of the localized gap states of hole-net silicon, by which the production of stimulated emission through controlling oxidation time can be explained.
Received: 06 April 2009
Revised: 24 April 2009
Accepted manuscript online:
PACS:
73.22.-f
(Electronic structure of nanoscale materials and related systems)
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 10764002).
Cite this article:
Huang Wei-Qi(黄伟其),ü Quan(吕泉), Zhang Rong-Tao(张荣涛), Wang Xiao-Yun(王晓允), and Yu Shi-Qiang(于示强) Localized electronic states in gaps on hole-net structures of silicon 2009 Chin. Phys. B 18 5066
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
