First-principle study of Mg adsorption on Si(111) surfaces
Ying Min-Ju(英敏菊)a)b)c), Zhang Ping(张平)d), and Du Xiao-Long(杜小龙)e)
a The Key Laboratory of Beam Technology and Material Modi¯cation of Ministry of Education, Beijing Normal University, Beijing 100875, China; b College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China; cBeijing Radiation Center, Beijing 100875, China; dLaboratory of Computational Physics, Institute of Applied Physics and Computational Mathematics, Beijing 100088, China; eBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract We have carried out first-principle calculations of Mg adsorption on Si(111) surfaces. Different adsorption sites and coverage effects have been considered. We found that the threefold hollow adsorption is energy-favoured in each coverage considered, while for the clean Si(111) surface of metallic feature, we found that 0.25 and 0.5 ML Mg adsorption leads to a semiconducting surface. The results for the electronic behaviour suggest a polarized covalent bonding between the Mg adatom and Si(111) surface.
Received: 22 April 2008
Revised: 11 September 2008
Accepted manuscript online:
PACS:
68.43.Bc
(Ab initio calculations of adsorbate structure and reactions)
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