Please wait a minute...
Chin. Phys. B, 2008, Vol. 17(9): 3428-3432    DOI: 10.1088/1674-1056/17/9/047
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Simulation of plasma doping process by using the localized molecular dynamics method

Ji Hui-Hui(冀会辉)a)b), Yu Min(于民)a)†, Ren Li-Ming(任黎明)a), Zhang Xing(张兴)a), Huang Ru(黄如)a), and Zhang You-Guang(张有光)b)
a Department of Microelectronics, Peking University, Beijing 100871, China; School of Electronic and Information Engineering, Beihang University, Beijing 100083, China
Abstract  Plasma doping is the candidate for semiconductor doping. Accurate simulation of the doping technology is needed for the advanced integrated circuit manufacturing. In this paper, the plasma doping process simulation is performed by using the localized molecular dynamics method. Models that involve the statistics of the implanted compositions, angles and energies are developed. The effect of the model on simulation results is studied. The simulation results about the doping concentration profile are supported by experimental data.
Keywords:  plasma doping      simulation      molecular dynamics  
Received:  27 February 2008      Revised:  05 May 2008      Accepted manuscript online: 
PACS:  61.72.up (Other materials)  
  61.72.S- (Impurities in crystals)  
  85.40.Ry (Impurity doping, diffusion and ion implantation technology)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos 60676022, 60625403 and 90707006), and State Key Program for Basic Research of China (Grant No 2006CB302701).

Cite this article: 

Ji Hui-Hui(冀会辉), Yu Min(于民), Ren Li-Ming(任黎明), Zhang Xing(张兴), Huang Ru(黄如), and Zhang You-Guang(张有光) Simulation of plasma doping process by using the localized molecular dynamics method 2008 Chin. Phys. B 17 3428

[1] Abnormal magnetic behavior of prussian blue analogs modified with multi-walled carbon nanotubes
Jia-Jun Mo(莫家俊), Pu-Yue Xia(夏溥越), Ji-Yu Shen(沈纪宇), Hai-Wen Chen(陈海文), Ze-Yi Lu(陆泽一), Shi-Yu Xu(徐诗语), Qing-Hang Zhang(张庆航), Yan-Fang Xia(夏艳芳), Min Liu(刘敏). Chin. Phys. B, 2023, 32(4): 047503.
[2] Micromagnetic study of magnetization reversal in inhomogeneous permanent magnets
Zhi Yang(杨质), Yuanyuan Chen(陈源源), Weiqiang Liu(刘卫强), Yuqing Li(李玉卿), Liying Cong(丛利颖), Qiong Wu(吴琼), Hongguo Zhang(张红国), Qingmei Lu(路清梅), Dongtao Zhang(张东涛), and Ming Yue(岳明). Chin. Phys. B, 2023, 32(4): 047504.
[3] Coexisting lattice contractions and expansions with decreasing thicknesses of Cu (100) nano-films
Simin An(安思敏), Xingyu Gao(高兴誉), Xian Zhang(张弦), Xin Chen(陈欣), Jiawei Xian(咸家伟), Yu Liu(刘瑜), Bo Sun(孙博), Haifeng Liu(刘海风), and Haifeng Song(宋海峰). Chin. Phys. B, 2023, 32(3): 036804.
[4] Intense low-noise terahertz generation by relativistic laser irradiating near-critical-density plasma
Shijie Zhang(张世杰), Weimin Zhou(周维民), Yan Yin(银燕), Debin Zou(邹德滨), Na Zhao(赵娜), Duan Xie(谢端), and Hongbin Zhuo(卓红斌). Chin. Phys. B, 2023, 32(3): 035201.
[5] Quantitative measurement of the charge carrier concentration using dielectric force microscopy
Junqi Lai(赖君奇), Bowen Chen(陈博文), Zhiwei Xing(邢志伟), Xuefei Li(李雪飞), Shulong Lu(陆书龙), Qi Chen(陈琪), and Liwei Chen(陈立桅). Chin. Phys. B, 2023, 32(3): 037202.
[6] Gyrokinetic simulation of low-n Alfvénic modes in tokamak HL-2A plasmas
Wen-Hao Lin(林文浩), Ji-Quan Li(李继全), J Garcia, and S Mazzi. Chin. Phys. B, 2023, 32(2): 025202.
[7] Different roles of surfaces' interaction on lattice mismatched/matched surfaces in facilitating ice nucleation
Xuanhao Fu(傅宣豪) and Xin Zhou(周昕). Chin. Phys. B, 2023, 32(2): 028202.
[8] Molecular dynamics study of interactions between edge dislocation and irradiation-induced defects in Fe–10Ni–20Cr alloy
Tao-Wen Xiong(熊涛文), Xiao-Ping Chen(陈小平), Ye-Ping Lin(林也平), Xin-Fu He(贺新福), Wen Yang(杨文), Wang-Yu Hu(胡望宇), Fei Gao(高飞), and Hui-Qiu Deng(邓辉球). Chin. Phys. B, 2023, 32(2): 020206.
[9] Formation of nanobubbles generated by hydrate decomposition: A molecular dynamics study
Zilin Wang(王梓霖), Liang Yang(杨亮), Changsheng Liu(刘长生), and Shiwei Lin(林仕伟). Chin. Phys. B, 2023, 32(2): 023101.
[10] Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation
Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Chin. Phys. B, 2023, 32(2): 028504.
[11] Micro-mechanism study of the effect of Cd-free buffer layers ZnXO (X=Mg/Sn) on the performance of flexible Cu2ZnSn(S, Se)4 solar cell
Caixia Zhang(张彩霞), Yaling Li(李雅玲), Beibei Lin(林蓓蓓), Jianlong Tang(唐建龙), Quanzhen Sun(孙全震), Weihao Xie(谢暐昊), Hui Deng(邓辉), Qiao Zheng(郑巧), and Shuying Cheng(程树英). Chin. Phys. B, 2023, 32(2): 028801.
[12] Time-resolved K-shell x-ray spectra of nanosecond laser-produced titanium tracer in gold plasmas
Zhencen He(何贞岑), Jiyan Zhang(张继彦), Jiamin Yang(杨家敏), Bing Yan(闫冰), and Zhimin Hu(胡智民). Chin. Phys. B, 2023, 32(1): 015202.
[13] Adsorption dynamics of double-stranded DNA on a graphene oxide surface with both large unoxidized and oxidized regions
Mengjiao Wu(吴梦娇), Huishu Ma(马慧姝), Haiping Fang(方海平), Li Yang(阳丽), and Xiaoling Lei(雷晓玲). Chin. Phys. B, 2023, 32(1): 018701.
[14] Variational quantum simulation of thermal statistical states on a superconducting quantum processer
Xue-Yi Guo(郭学仪), Shang-Shu Li(李尚书), Xiao Xiao(效骁), Zhong-Cheng Xiang(相忠诚), Zi-Yong Ge(葛自勇), He-Kang Li(李贺康), Peng-Tao Song(宋鹏涛), Yi Peng(彭益), Zhan Wang(王战), Kai Xu(许凯), Pan Zhang(张潘), Lei Wang(王磊), Dong-Ning Zheng(郑东宁), and Heng Fan(范桁). Chin. Phys. B, 2023, 32(1): 010307.
[15] Prediction of flexoelectricity in BaTiO3 using molecular dynamics simulations
Long Zhou(周龙), Xu-Long Zhang(张旭龙), Yu-Ying Cao(曹玉莹), Fu Zheng(郑富), Hua Gao(高华), Hong-Fei Liu(刘红飞), and Zhi Ma(马治). Chin. Phys. B, 2023, 32(1): 017701.
No Suggested Reading articles found!