Abstract High-quality oxide semiconductor ZnO thin films were prepared on single-crystal sapphire and LaAlO$_{3}$ substrates by pulsed laser deposition (PLD) in the mixture gas of hydrogen and argon. Low resistivity n-type ZnO thin films with smoother surface were achieved by deposition at 600$^\circ$C in 1Pa of the mixture gas. In addition, ferromagnetism was observed in Co-doped ZnO thin films and rectification $I-V$ curves were found in p-GaN/n-ZnO and p-CdTe/n-ZnO heterostructure junctions. The results indicated that using mixture gas of hydrogen and argon in PLD technique was a flexible method for depositing high-quality n-type oxide semiconductor films, especially for the multilayer thin film devices.
Received: 30 May 2005
Revised: 03 September 2005
Accepted manuscript online:
(Magnetic properties of monolayers and thin films)
Fund: Project supported by the National Natural Science Foundation of China (Grant No 19974001) and the National Key Basic Research Special Foundation of China (Grant No NKBRSF G1999064604 and G2000036505).
Cite this article:
Zhou Xin (周新), Wang Shi-Qi (王世奇), Lian Gui-Jun (连贵君), Xiong Guang-Cheng (熊光成) Growth of n-type ZnO thin films by using mixture gas of hydrogen and argon 2006 Chinese Physics 15 199
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
