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Chinese Physics, 2003, Vol. 12(4): 438-442    DOI: 10.1088/1009-1963/12/4/317
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film

Chen Chang-Yong (陈长勇)a, Chen Wei-De (陈维德)a, Li Guo-Hua (李国华)b, Song Shu-Fang (宋淑芳)a, Ding Kun (丁琨)b, Xu Zhen-Jia (许振嘉)a
a State Laboratory for Surface Physics, Institute of Semiconductors and Centre for Condensed Matter Physics, Chinese Academy of Science, Beijing 100083, China; b National Laboratory for Superlattices and Microstructures and Institute of semiconductors, Chinese Academy of Science, Beijing 100083, China
Abstract  An investigation on the correlation between amorphous Si (a-Si) domains and Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H<Er>) film is presented. On one hand, a-Si domains provide sufficient carriers for Er3+ carrier-mediated excitation which has been proved to be the highest excitation path for Er3+ ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiOx) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er3+ ions. This study provides a better understanding of the role of a-Si domains on Er3+ emission in a-Si:O:Hfilms.
Keywords:  a-Si domain      erbium      photoluminescence  
Received:  26 August 2002      Revised:  18 December 2002      Accepted manuscript online: 
PACS:  78.55.Qr (Amorphous materials; glasses and other disordered solids)  
  78.66.-w (Optical properties of specific thin films)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 69976028).

Cite this article: 

Chen Chang-Yong (陈长勇), Chen Wei-De (陈维德), Li Guo-Hua (李国华), Song Shu-Fang (宋淑芳), Ding Kun (丁琨), Xu Zhen-Jia (许振嘉) Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film 2003 Chinese Physics 12 438

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