EXCITON ENERGY OF THE InAs/GaAs SELF-ASSEMBLED QUANTUM DOT IN A SEMICONDUCTOR MICROCAVITY
Pan Liu-xian (潘留仙)ab, Li Shu-shen (李树深)b, Xia Jian-bai (夏建白)b
a Department of Physics, Yiyang Teacher's College, Yiyang 413049, China; b National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract We report on the theoretical study of the interaction of the quantum dot (QD) exciton with the photon waveguide models in a semiconductor microcavity. The InAs/GaAs self-assembled QD exciton energies are calculated in a microcavity. The calculated results reveal that the electromagnetic field reduces the exciton energies in a semiconductor microcavity. The effect of the electromagnetic field decreases as the radius of the QD increases. Our calculated results are useful for designing and fabricating photoelectron devices.
Received: 13 February 2001
Revised: 14 March 2001
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 19974043).
Cite this article:
Pan Liu-xian (潘留仙), Li Shu-shen (李树深), Xia Jian-bai (夏建白) EXCITON ENERGY OF THE InAs/GaAs SELF-ASSEMBLED QUANTUM DOT IN A SEMICONDUCTOR MICROCAVITY 2001 Chinese Physics 10 655
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