a Key Laboratory in University for Radiation Beam Technology and Materials Modification, Beijing Normal University; Institute of Low Energy Nuclear Physics, Beijing Normal University; Beijing Radiation Center; Beijing 100875, China; b Department of Materials Science and Engineering, Nanchang University, Nanchang 330047, China; c Department of Chemistry, Peking University, Beijing 100871, China; d Surface Physics Laboratory, Fudan University, Shanghai 200433, China
Abstract Erbium-doped silicon has been fabricated by ion implantation performed on a metal vapour vacuum arc ion source. After rapid thermal annealing (RTA), 1.54μm photoluminescence was observed at 77K. Rutherford backscattering spectrum indicated that Er ions are mainly distributed near the surface of the samples, and Er concentration exceeded 1021cm-3. Needle nanometre crystalline silicon (nc-Si) was formed on the substrate surface. Band edge emission spectrum at 10K verified that the minority carrier lifetime increased upon RTA. The photocarrier mediated processes enabled energy transferring from nc-Si (or c-Si) to the Er3+ ions and resulted in light emission of 1.54μm.
Received: 18 January 2001
Revised: 16 December 2000
Accepted manuscript online:
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