a Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, Chinab Humboldt-Universit$\ddot{\rm a}$t zu Berlin, Institut f$\ddot{\rm u}$r Physik, Invalidenstrasse 110, D-10115 Berlin, Germany
Abstract HgCdTe epilayers were grown by molecular beam epitaxy on GaAs(211)B substrates. Process of the HgCdTe epitaxial growth can be monitored by reflection high-energy electron diffraction. Results of the infrared transmission spectrum, Raman scattering spectrum and infrared photoluminescence spectrum in magnetic field have been studied.
Received: 09 December 1994
Revised: 01 December 1995
Accepted manuscript online:
PACS:
81.15.Hi
(Molecular, atomic, ion, and chemical beam epitaxy)
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