Please wait a minute...
Acta Physica Sinica (Overseas Edition), 1996, Vol. 5(5): 370-376    DOI: 10.1088/1004-423X/5/5/007
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

STUDY OF MOLECULAR BEAM EPITAXIAL GROWTH AND OPTICAL CHARACTERISTICS OF HgCdTe

GUO SHI-PING (郭世平)a, ZHANG JIA-MING (张家明)a, LIU PU-LIN (刘普霖)a, SHEN XUE-CHU (沈学础)a, YUAN SHI-XIN (袁诗鑫)a, J.W. TOMMb
a Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, Chinab Humboldt-Universit$\ddot{\rm a}$t zu Berlin, Institut f$\ddot{\rm u}$r Physik, Invalidenstrasse 110, D-10115 Berlin, Germany
Abstract  HgCdTe epilayers were grown by molecular beam epitaxy on GaAs(211)B substrates. Process of the HgCdTe epitaxial growth can be monitored by reflection high-energy electron diffraction. Results of the infrared transmission spectrum, Raman scattering spectrum and infrared photoluminescence spectrum in magnetic field have been studied.
Received:  09 December 1994      Revised:  01 December 1995      Accepted manuscript online: 
PACS:  81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)  
  68.55.A- (Nucleation and growth)  
  61.05.jh (Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED))  
  78.30.Fs (III-V and II-VI semiconductors)  
  78.55.Et (II-VI semiconductors)  
  78.66.Hf (II-VI semiconductors)  

Cite this article: 

GUO SHI-PING (郭世平), ZHANG JIA-MING (张家明), LIU PU-LIN (刘普霖), SHEN XUE-CHU (沈学础), YUAN SHI-XIN (袁诗鑫), J.W. TOMM STUDY OF MOLECULAR BEAM EPITAXIAL GROWTH AND OPTICAL CHARACTERISTICS OF HgCdTe 1996 Acta Physica Sinica (Overseas Edition) 5 370

[1] TiO2/SnO2 electron transport double layers with ultrathin SnO2 for efficient planar perovskite solar cells
Can Li(李灿), Hongyu Xu(徐宏宇), Chongyang Zhi(郅冲阳), Zhi Wan(万志), and Zhen Li(李祯). Chin. Phys. B, 2022, 31(11): 118802.
[2] Selective formation of ultrathin PbSe on Ag(111)
Jing Wang(王静), Meysam Bagheri Tagani, Li Zhang(张力), Yu Xia(夏雨), Qilong Wu(吴奇龙), Bo Li(黎博), Qiwei Tian(田麒玮), Yuan Tian(田园), Long-Jing Yin(殷隆晶), Lijie Zhang(张利杰), and Zhihui Qin(秦志辉). Chin. Phys. B, 2022, 31(9): 096801.
[3] Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties
Zhen-Hua Li(李振华), Peng-Fei Shao(邵鹏飞), Gen-Jun Shi(施根俊), Yao-Zheng Wu(吴耀政), Zheng-Peng Wang(汪正鹏), Si-Qi Li(李思琦), Dong-Qi Zhang(张东祺), Tao Tao(陶涛), Qing-Jun Xu(徐庆君), Zi-Li Xie(谢自力), Jian-Dong Ye(叶建东), Dun-Jun Chen(陈敦军), Bin Liu(刘斌), Ke Wang(王科), You-Dou Zheng(郑有炓), and Rong Zhang(张荣). Chin. Phys. B, 2022, 31(1): 018102.
[4] Growth of high-crystallinity uniform GaAs nanowire arrays by molecular beam epitaxy
Yu-Bin Kang(亢玉彬), Feng-Yuan Lin(林逢源), Ke-Xue Li(李科学), Ji-Long Tang(唐吉龙), Xiao-Bing Hou(侯效兵), Deng-Kui Wang(王登魁), Xuan Fang(方铉), Dan Fang(房丹), Xin-Wei Wang(王新伟), and Zhi-Peng Wei(魏志鹏). Chin. Phys. B, 2021, 30(7): 078102.
[5] Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technology
Shuang Sun(孙爽), Jian-Huan Wang(王建桓), Bao-Tong Zhang(张宝通), Xiao-Kang Li(李小康), Qi-Feng Cai(蔡其峰), Xia An(安霞), Xiao-Yan Xu(许晓燕), Jian-Jun Zhang(张建军), and Ming Li(黎明). Chin. Phys. B, 2021, 30(7): 078104.
[6] Molecular beam epitaxy growth of iodide thin films
Xinqiang Cai(蔡新强), Zhilin Xu(徐智临), Shuai-Hua Ji(季帅华), Na Li(李娜), and Xi Chen(陈曦). Chin. Phys. B, 2021, 30(2): 028102.
[7] Magnetic characterization of a thin Co2MnSi/L10–MnGa synthetic antiferromagnetic bilayer prepared by MBE
Shan Li(黎姗), Jun Lu(鲁军)†, Si-Wei Mao(毛思玮), Da-Hai Wei(魏大海), and Jian-Hua Zhao(赵建华). Chin. Phys. B, 2020, 29(10): 107501.
[8] Growth and structural characteristics of metastable β-In2Se3 thin films on H-terminated Si(111) substrates by molecular beam epitaxy
Yi-Fan Shen(沈逸凡), Xi-Bo Yin(尹锡波), Chao-Fan Xu(徐超凡), Jing He(贺靖), Jun-Ye Li(李俊烨), Han-Dong Li(李含冬), Xiao-Hong Zhu(朱小红), Xiao-Bin Niu(牛晓滨). Chin. Phys. B, 2020, 29(5): 056402.
[9] Electronic structure of molecular beam epitaxy grown 1T'-MoTe2 film and strain effect
Xue Zhou(周雪), Zeyu Jiang(姜泽禹), Kenan Zhang(张柯楠), Wei Yao(姚维), Mingzhe Yan(颜明哲), Hongyun Zhang(张红云), Wenhui Duan(段文晖), Shuyun Zhou(周树云). Chin. Phys. B, 2019, 28(10): 107307.
[10] Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μ quantum dot lasers
Hui-Ming Hao(郝慧明), Xiang-Bin Su(苏向斌), Jing Zhang(张静), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2019, 28(7): 078104.
[11] Epitaxial fabrication of two-dimensional TiTe2 monolayer on Au(111) substrate with Te as buffer layer
Zhipeng Song(宋志朋), Bao Lei(雷宝), Yun Cao(曹云), Jing Qi(戚竞), Hao Peng(彭浩), Qin Wang(汪琴), Li Huang(黄立), Hongliang Lu(路红亮), Xiao Lin(林晓), Ye-Liang Wang(王业亮), Shixuan Du(杜世萱), Hong-Jun Gao(高鸿钧). Chin. Phys. B, 2019, 28(5): 056801.
[12] Short-wave infrared InGaAs photodetectors and focal plane arrays
Yong-Gang Zhang(张永刚), Yi Gu(顾溢), Xiu-Mei Shao(邵秀梅), Xue Li(李雪), Hai-Mei Gong(龚海梅), Jia-Xiong Fang(方家熊). Chin. Phys. B, 2018, 27(12): 128102.
[13] 1.3-μm InAs/GaAs quantum dots grown on Si substrates
Fu-Hui Shao(邵福会), Yi Zhang(张一), Xiang-Bin Su(苏向斌), Sheng-Wen Xie(谢圣文), Jin-Ming Shang(尚金铭), Yun-Hao Zhao(赵云昊), Chen-Yuan Cai(蔡晨元), Ren-Chao Che(车仁超), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2018, 27(12): 128105.
[14] High quality PdTe2 thin films grown by molecular beam epitaxy
En Li(李恩), Rui-Zi Zhang(张瑞梓), Hang Li(李航), Chen Liu(刘晨), Geng Li(李更), Jia-Ou Wang(王嘉鸥), Tian Qian(钱天), Hong Ding(丁洪), Yu-Yang Zhang(张余洋), Shi-Xuan Du(杜世萱), Xiao Lin(林晓), Hong-Jun Gao(高鸿钧). Chin. Phys. B, 2018, 27(8): 086804.
[15] In-situ spectroscopic studies and interfacial engineering on FeSe/oxide heterostructures: Insights on the interfacial superconductivity
Peng Rui (彭瑞), Xu Hai-Chao (徐海超), Feng Dong-Lai (封东来). Chin. Phys. B, 2015, 24(11): 117902.
No Suggested Reading articles found!