Please wait a minute...
Chin. Phys. B, 2026, Vol. 35(7): 077702    DOI: 10.1088/1674-1056/ae8441
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Sliding ferroelectricity and tunable linear and nonlinear optical properties in bilayer SnP2Se6

Huicong Li(李汇聪), Yali Yang(杨亚利), Jiangang He(和建刚), and Rongming Wang(王荣明)§
Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, the State Key Laboratory for Advanced Metals and Materials, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
Abstract  Layer stacking of van der Waals bilayers provides an effective means of engineering their physical properties. Here, based on first-principles calculations, we systematically investigate the stacking configurations, electronic structure, and linear and nonlinear optical properties of bilayer SnP$_2$Se$_6$. Our results show that the AB and AC stackings are energetically degenerate polar states connected by interlayer sliding, with a low switching barrier and opposite out-of-plane polarizations. Interlayer sliding markedly modifies the electronic structure and optical response, and reverses the orbital character of the lowest conduction-band states, thereby enabling electric-field control of the spatial distribution of photogenerated electrons and the second-harmonic generation (SHG) response. These findings reveal an intrinsic coupling among stacking patterns, ferroelectric polarization, and nonlinear optical activity, and identify bilayer SnP$_2$Se$_6$ as a promising platform for reconfigurable ferroelectric and optoelectronic devices.
Keywords:  two-dimensional materials      sliding ferroelectricity      second-harmonic generation      optical properties  
Received:  14 May 2026      Revised:  30 June 2026      Accepted manuscript online:  30 June 2026
PACS:  77.80.-e (Ferroelectricity and antiferroelectricity)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12034002, 12374024, and 12304115), the Fundamental Research Funds for the Central Universities (Grant No. FRF-TP-24-039A), Interdisciplinary Research Project for Young Teachers of USTB (Fundamental Research Funds for the Central Universities, FRF-IDRY- 23-038), and 2023 Fund for Fostering Young Scholars of the School of Mathematics and Physics, USTB (Grant No. FRFBR-23-01B).
Corresponding Authors:  Yali Yang, Jiangang He, Rongming Wang     E-mail:  ylyang@ustb.edu.cn;jghe2021@ustb.edu.cn;rmwang@ustb.edu.cn

Cite this article: 

Huicong Li(李汇聪), Yali Yang(杨亚利), Jiangang He(和建刚), and Rongming Wang(王荣明) Sliding ferroelectricity and tunable linear and nonlinear optical properties in bilayer SnP2Se6 2026 Chin. Phys. B 35 077702

[1] Novoselov K, Geim A, Morozov S, Jiang D, Zhang Y, Dubonos S, Grigorieva I and Firsov A 2004 Science 306 666
[2] Novoselov K, Jiang D, Schedin F, Booth T, Khotkevich V, Morozov S and Geim A 2005 Proc. Natl. Acad. Sci. USA 102 10451
[3] Radisavljevic B, Radenovic A, Brivio J, Giacometti V and Kis A 2011 Nat. Nanotechnol. 6 147
[4] Nery J P, Monacelli L and Mauri F 2026 Phys. Chem. Chem. Phys. 28 707
[5] Park J, Yeu I W, Han G, Hwang C S and Choi J H 2019 Sci. Rep. 9 14919
[6] Li H, Yang Y, Xia Z, Wang Y, Wei J, He J and Wang R 2025 Phys. Rev. B 111 125411
[7] Dean C R, Young A F, Meric I, Lee C, Wang L, Sorgenfrei S, Watanabe K, Taniguchi T, Kim P, Shepard K L and Hone J 2010 Nat. Nanotechnol. 5 722
[8] Xue J, Sanchez-Yamagishi J, Bulmash D, Jacquod P, Deshpande A, Watanabe K, Taniguchi T, Jarillo-Herrero P and Leroy B J 2011 Nat. Mater. 10 282
[9] Lee C, Li Q, Kalb W, Liu X Z, Berger H, Carpick R W and Hone J 2010 Science 328 76
[10] Wang S, Sha J, Lv W, Zhang Y, Li X, Tang Y, Hower J C, French D, Schobert H H, Guo X and Dai S 2025 Carbon 238 120273
[11] He J, Hummer K and Franchini C 2014 Phys. Rev. B 89 075409
[12] Chen R, Meng F, Zhang H, Liu Y, Yan S, Xu X, Zhu L, Chen J, Zhou T, Zhou J, Yang F, Ci P, Huang X, Chen X, Zhang T, Cai Y, Dong K, Liu Y, Watanabe K, Taniguchi T, Lin C C, Penumatcha A V, Young I, Chan E, Wu J, Yang L, Ramesh R and Yao J 2025 Nat. Commun. 16 3648
[13] Yasuda K, Wang X, Watanabe K, Taniguchi T and Jarillo-Herrero P 2021 Science 372 1458
[14] Ju L, Shi Z, Nair N, Lv Y, Jin C, Velasco J Jr, Ojeda-Aristizabal C, Bechtel H A, Martin M C, Zettl A, Analytis J and Wang F 2015 Nature 520 650
[15] Suzuki R, Sakano M, Zhang Y J, Akashi R, Morikawa D, Harasawa A, Kuroda K, Miyamoto K, Okuda T, Ishizaka K, Arita R and Iwasa Y 2014 Nat. Nanotechnol. 9 611
[16] Fox C, Mao Y, Zhang X, Wang Y and Xiao J 2023 Chem. Rev. 124 1862
[17] Sivadas N, Okamoto S, Xu X, Fennie C J and Xiao D 2018 Nano Lett. 18 7658
[18] Cao Y, Fatemi V, Fang S, Watanabe K, Taniguchi T, Kaxiras E and Jarillo-Herrero P 2018 Nature 556 43
[19] Zhou W, Hua J, Liu N, Ding J, Xiang H, Zhu W and Xu S 2024 Nano Lett. 24 8378
[20] Shan Y, Li Y, Huang D, Tong Q, Yao W, Liu W T and Wu S 2018 Sci. Adv. 4 eaat0074
[21] Zhao M, Ye Z, Suzuki R, Ye Y, Zhu H, Xiao J, Wang Y, Iwasa Y and Zhang X 2016 Light Sci. Appl. 5 e16131
[22] Yariv A and Yeh P 2007 Photonics: Optical Electronics in Modern Communications (Oxford: Oxford University Press)
[23] Autere A, Jussila H, Dai Y, Wang Y, Lipsanen H and Sun Z 2018 Adv. Mater. 30 1705963
[24] Yang D, Wu J, Zhou B T, Liang J, Ideue T, Siu K W, Awan K M, Watanabe K, Taniguchi T, Iwasa Y, Franz M and Ye Z 2022 Nat. Photonics 16 469
[25] Shan Y, Li Y, Huang D, Tong Q, Yao W, Liu W T and Wu S 2018 Sci. Adv. 4 eaat0074
[26] Zhou W, Hua J, Liu N, Ding J, Xiang H, Zhu W and Xu S 2024 Nano Lett. 24 8378
[27] Norden T, Martinez L M, Tarefder N, Kwock K W C, Holtzman L N, Olsen N, McClintock L N, Yeo J H, Zhao L, Zhu X, Hone J C, Yoo J, Zhu J X, Schuck P J, Taylor A J, Prasankumar R P, Kort-Kamp W J M and Padmanabhan P 2025 ACS Nano 19 30919
[28] Wang X, Yasuda K, Zhang Y, Liu S, Watanabe K, Taniguchi T, Hone J, Fu L and Jarillo-Herrero P 2022 Nat. Nanotechnol. 17 367
[29] Wang C, You L, Cobden D and Wang J 2023 Nat. Mater. 22 542
[30] Wang Z and Dong S 2025 Phys. Rev. B 111 L201406
[31] Li L and Wu M 2017 ACS Nano 11 6382
[32] Meng P, Wu Y, Bian R, Pan E, Dong B, Zhao X, Chen J, Wu L, Sun Y, Fu Q, Liu Q, Shi D, Zhang Q, Zhang Y W and Liu F 2022 Nat. Commun. 13 7696
[33] Xue W, Wang P, Ci W, Guo Y, Qu J, Zeng Z, Liu T, He R, Cheng S and Xu X 2025 Nat. Commun. 16 6313
[34] He R, Wang H, Deng F, Gao Y, Zhang B, Shi Y, Li R W and Zhong Z 2025 Phys. Rev. Lett. 134 076101
[35] Sui F, Jin M, Zhang Y, Qi R, Wu Y N, Huang R, Yue F and Chu J 2023 Nat. Commun. 14 36
[36] Yao W, Jia W, Wang J, Zhan X, Zhang L and Wang X 2025 Surf. Interfaces 78 108165
[37] Fei Z, Zhao W, Palomaki T A, Sun B, Miller M K, Zhao Z, Yan J, Xu X and Cobden D H 2018 Nature 560 336
[38] Bian R, He R, Pan E, Cao G, Meng P, Chen J, Liu Q, Zhong Z, Li W and Liu F 2024 Science 385 57
[39] Sun W, Wang W, Yang C, Hu R, Yan S, Huang S and Cheng Z 2024 Nano Lett. 24 11179
[40] Sangwan V K, Chica D G, Chu T C, Cheng M, Quintero M A, Hao S, Mead C E, Choi H, Zu R, Sheoran J, He J, Liu Y, Qian E, Laing C C, Kang M A, Gopalan V, Wolverton C, Dravid V P, Lauhon L J, Hersam M C and Kanatzidis M G 2024 Sci. Adv. 10 eado8272
[41] Zhu C Y, Zhang Z, Qin J K, Wang Z, Wang C, Miao P, Huang P Y, Zhang Y, Xu K, Zhen L, Chai Y and Xu C Y 2023 Nat. Commun. 14 2521
[42] Liu H, Liao W, Deng D W, Ge Q, Zou D, Xu Y, Tang Z and Yin W J 2025 J. Phys. Chem. C 129 15905
[43] Li H, Yang Y, Han Z, Cao L, Wang Y, Xia Z, Yang Z, He J and Wang R 2026 Phys. Rev. B 113 155202
[44] Kresse G and Furthmuller J 1996 Comput. Mater. Sci 6 15
[45] Kresse G and Furthmuller J 1996 Phys. Rev. B 54 11169
[46] Wang V, Xu N, Liu J C, Tang G and Geng W T 2021 Comput. Phys. Commun. 267 108033
[47] Blochl P E 1994 Phys. Rev. B 50 17953
[48] Kresse G and Joubert D 1999 Phys. Rev. B 59 1758
[49] Klimes J, Bowler D R and Michaelides A 2011 Phys. Rev. B 83 195131
[50] Henkelman G, Uberuaga B P and Jonsson H 2000 J. Chem. Phys. 113 9901
[51] Henkelman G and Jonsson H 2000 J. Chem. Phys. 113 9978
[52] Tran F and Blaha P 2009 Phys. Rev. Lett. 102 226401
[53] Perdew J P, Burke K and Ernzerhof M 1998 Phys. Rev. Lett. 80 891
[54] Gonze X, Amadon B, Antonius G, et al. 2020 Comput. Phys. Commun. 248 107042
[55] Romero A H, Allan D C, Amadon B, et al. 2020 J. Chem. Phys. 152 124102
[56] Veithen M, Gonze X and Ghosez P 2005 Phys. Rev. B 71 125107
[57] Kohn W and Sham L J 1965 Phys. Rev. 140 A1133
[58] See supporting information for ferroelectric switching and secondharmonic generation behavior in sliding bilayer SnP2Se6
[59] He J, Hummer K and Franchini C 2014 Phys. Rev. B 89 075409
[1] Experimental progress on two-dimensional multiferroics
Yuyang Wang(王羽扬), Dacheng Tian(田大铖), and Lan Chen(陈岚). Chin. Phys. B, 2026, 35(7): 077511.
[2] The rise of van der Waals multiferroic heterostructures: Interfacial physics and devices
Yihao Zhao(赵一豪), Hongxu Duan(段虹旭), Tai Min(闵泰), and Tao Li(李桃). Chin. Phys. B, 2026, 35(6): 067501.
[3] Ultra-high anisotropy and electronic property of two-dimensional PbSnS2 with a black phosphorus structure
Xinlong Wang(王鑫龙), Shihao Wang(王诗皓), Yandi Jiang(姜彦迪), Qing Min(闵清), Haiming Huang(黄海铭), Chengrui Wu(吴承瑞), and Juntao Yang(杨俊涛). Chin. Phys. B, 2026, 35(5): 057304.
[4] ARPES study of Y2O2Bi single crystals: Intrinsic electronic structure of Bi square nets
Yun-Bo Wu(吴云波), Tong-Rui Li(李彤瑞), Zhi-Peng Cao(曹志鹏), Zhan-Feng Liu(刘站锋), Yu-Liang Li(李昱良), Zheng-Ming Shang(尚政明), Xin Zheng(郑新), Hui Tian(田慧), Zong-Yi Wang(王宗一), Yu-Tong Bi(毕雨桐), Hao-Yang Zhou(周浩洋), Yi Liu(刘毅), Guo-Bin Zhang(张国斌), Zheng-Tai Liu(刘正太), Da-Wei Shen(沈大伟), Li-Dong Zhang(张李东), Sheng-Tao Cui(崔胜涛), and Zhe Sun(孙喆). Chin. Phys. B, 2026, 35(4): 047101.
[5] Two-dimensional kagome semiconductor Sc6S5X6 (X = Cl, Br, I) with trilayer kagome lattice
Jin-Ling Yan(闫金铃), Xing-Yu Wang(王星雨), Gen-Ping Wu(吴根平), Hao Wang(王浩), Ya-Jiao Ke(柯亚娇), Jiafu Wang(王嘉赋), Zhi-Hong Liu(刘志宏), and Jun-Hui Yuan(袁俊辉). Chin. Phys. B, 2026, 35(2): 027102.
[6] Brief investigations on CuxTa2-xO5 for thermoelectric and optical responses using density functional and experimental techniques
Laiba Ashraf, Salma Waseem, Maria Khalil, Naveed Ahmad, Pervaiz Ahmad, Imen Kebaili, and Murtaza Saleem. Chin. Phys. B, 2026, 35(2): 027801.
[7] Unique high-energy excitons in two-dimensional transition metal dichalcogenides
Yongsheng Gao(高永盛), Yuanzheng Li(李远征), Weizhen Liu(刘为振), Chuxin Yan(闫楚欣), Qingbin Wang(王庆彬), Wei Xin(辛巍), Haiyang Xu(徐海阳), and Yichun Liu(刘益春). Chin. Phys. B, 2025, 34(9): 097102.
[8] Exciton insulators in two-dimensional systems
Huaiyuan Yang(杨怀远), Xi Dai(戴希), and Xin-Zheng Li(李新征). Chin. Phys. B, 2025, 34(9): 097301.
[9] Unveiling the thermal transport mechanisms in novel carbon-based graphene-like materials using machine-learning potential
Yao-Yuan Zhang(章耀元), Meng-Qiu Long(龙孟秋), Sai-Jie Cheng(程赛杰), and Wu-Xing Zhou(周五星). Chin. Phys. B, 2025, 34(6): 067101.
[10] Manipulating optical and electronic properties through interfacial ferroelectricity
Yulu Liu(刘钰璐), Gan Liu(刘敢), and Xiaoxiang Xi(奚啸翔). Chin. Phys. B, 2025, 34(1): 017701.
[11] GaInX3 (X = S, Se, Te): Ultra-low thermal conductivity and excellent thermoelectric performance
Zhi-Fu Duan(段志福), Chang-Hao Ding(丁长浩), Zhong-Ke Ding(丁中科), Wei-Hua Xiao(肖威华), Fang Xie(谢芳), Nan-Nan Luo(罗南南), Jiang Zeng(曾犟), Li-Ming Tang(唐黎明), and Ke-Qiu Chen(陈克求). Chin. Phys. B, 2024, 33(8): 087302.
[12] Gate-field control of valley polarization in valleytronics
Ting-Ting Zhang(张婷婷), Yilin Han(韩依琳), Run-Wu Zhang(张闰午), and Zhi-Ming Yu(余智明). Chin. Phys. B, 2024, 33(6): 067303.
[13] Effect of strain on structure and electronic properties of monolayer C4N4
Hao Chen(陈昊), Ying Xu(徐瑛), Jia-Shi Zhao(赵家石), and Dan Zhou(周丹). Chin. Phys. B, 2024, 33(5): 057302.
[14] Anomalous valley Hall effect in two-dimensional valleytronic materials
Hongxin Chen(陈洪欣), Xiaobo Yuan(原晓波), and Junfeng Ren(任俊峰). Chin. Phys. B, 2024, 33(4): 047304.
[15] Improving the electrical performances of InSe transistors by interface engineering
Tianjun Cao(曹天俊), Song Hao(郝松), Chenchen Wu(吴晨晨), Chen Pan(潘晨), Yudi Dai(戴玉頔), Bin Cheng(程斌), Shi-Jun Liang(梁世军), and Feng Miao(缪峰). Chin. Phys. B, 2024, 33(4): 047302.
No Suggested Reading articles found!