Please wait a minute...
Chin. Phys. B, 2026, Vol. 35(7): 077201    DOI: 10.1088/1674-1056/ae64d4
RAPID COMMUNICATION Prev   Next  

Proximity-induced negative magnetoresistance and anomalous Hall effect in monolayer graphene/CrSBr heterojunctions

Bin Dai(戴彬)1,2,†, Ke Zhu(祝轲)2,†, Chenyu Bai(白晨宇)2,3,†, Yechao Han(韩烨超)3, Guojing Hu(胡国静)3, Ruwen Wang(王汝文)2,3, Senhao Lv(吕森浩)2, Haisen Liu(刘海森)1,2, Zhen Zhao(赵振)2, Jianchen Lu(卢建臣)1,‡, Hui Guo(郭辉)2,3,§, Haitao Yang(杨海涛)2,3, and Hong-Jun Gao(高鸿钧)2,3
1 Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China;
2 Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
Abstract  The integration of graphene with magnetic insulators to invoke the magnetic proximity effect provides a powerful route toward spintronic devices that preserve graphene’s exceptional transport characteristics. A persistent challenge, however, is the identification of magnetic substrates that are both air-stable and capable of forming high-quality van der Waals interfaces. Here, we present a magnetotransport investigation of monolayer graphene coupled to a layered A-type antiferromagnetic semiconductor CrSBr nanoflake, which is notable for its high Néel temperature (~132 K) and outstanding environmental stability. High-quality heterojunctions are obtained via a dry-transfer technique to ensure an atomically clean interface. Pronounced negative magnetoresistance and anomalous Hall effect in graphene are observed, arising from the suppression of spin-disorder scattering induced by the proximity exchange field from the CrSBr layer. Moreover, the heterojunction exhibits clear two-frequency Shubnikov–de Haas oscillations, evidencing the emergence of Fermi surface reconstruction in the monolayer graphene. Our results demonstrate that antiferromagnetic CrSBr can impose a robust magnetic proximity effect that manipulates the spin degrees of freedom in graphene, opening new opportunities for spintronic functionalities in two-dimensional materials.
Keywords:  magnetic proximity effect      negative magnetoresistance      anomalous Hall effect      Shubnikov-de Haas oscillation  
Received:  12 March 2026      Revised:  21 April 2026      Accepted manuscript online:  27 April 2026
PACS:  72.80.Vp (Electronic transport in graphene)  
  73.43.Qt (Magnetoresistance)  
  85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)  
Fund: The work is supported by the National Key Research and Development Program of China (Grant No. 2022YFA1204100), the National Natural Science Foundation of China (Grant Nos. 62488201 and 52572188), the Innovation Program of Quantum Science and Technology (Grant No. 2021ZD0302700), and the China Postdoctoral Science Foundation (Grant No. E5BK081).
Corresponding Authors:  Jianchen Lu, Hui Guo     E-mail:  jclu@kust.edu.cn;guohui@iphy.ac.cn

Cite this article: 

Bin Dai(戴彬), Ke Zhu(祝轲), Chenyu Bai(白晨宇), Yechao Han(韩烨超), Guojing Hu(胡国静), Ruwen Wang(王汝文), Senhao Lv(吕森浩), Haisen Liu(刘海森), Zhen Zhao(赵振), Jianchen Lu(卢建臣), Hui Guo(郭辉), Haitao Yang(杨海涛), and Hong-Jun Gao(高鸿钧) Proximity-induced negative magnetoresistance and anomalous Hall effect in monolayer graphene/CrSBr heterojunctions 2026 Chin. Phys. B 35 077201

[1] Drogeler M, Franzen C, Volmer F, Pohlmann T, Banszerus L, Wolter M, Watanabe K, Taniguchi T, Stampfer C and Beschoten B 2016 Nano Lett. 16 3533
[2] Banszerus L, Schmitz M, Engels S, Dauber J, Oellers M, Haupt F, Watanabe K, Taniguchi T, Beschoten B and Stampfer C 2015 Sci. Adv. 1 e1500222
[3] Zatko V, Galceran R, Galbiati M, Peiro J, Godel F, Kern L M, Perconte D, Ibrahim F, Hallal A, Chshiev M, Martinez B, Frontera C, Balcells L, Kidambi P R, Robertson J, Hofmann S, Collin S, Petroff F, Martin M B, Dlubak B and Seneor P 2023 Nano Lett. 23 34
[4] Tang C, Zhang Z, Lai S, Tan Q and Gao W 2020 Adv. Mater. 32 1908498
[5] Asshoff P U, Sambricio J L, Rooney A P, Slizovskiy S, Mishchenko A, Rakowski A M, Hill E W, Geim A K, Haigh S J, Fal’ko V I, VeraMarun I J and Grigorieva I V 2017 2D Mater. 4 031004
[6] Lee J and Fabian J 2016 Phys. Rev. B 94 195401
[7] Yang H X, Hallal A, Terrade D, Waintal X, Roche S and Chshiev M 2013 Phys. Rev. Lett. 110 046603
[8] Leutenantsmeyer J C, Kaverzin A A, Wojtaszek M and Van Wees B J 2016 2D Mater. 4 014001
[9] Wei P, Lee S, Lemaitre F, Pinel L, Cutaia D, Cha W, Katmis F, Zhu Y, Heiman D, Hone J, Moodera J S and Chen C T 2016 Nat. Mater. 15 711
[10] Wu Y, Yin G, Pan L, Grutter A J, Pan Q, Lee A, Gilbert D A, Borchers J A, Ratcliff W, Li A, Han X and Wang K L 2020 Nat. Electron. 3 604
[11] Jungwirth T, Marti X, Wadley P and Wunderlich J 2016 Nat. Nanotechnol 11 231
[12] Zhou B, Balgley J, Lampen-Kelley P, Yan J Q, Mandrus D G and Henriksen E A 2019 Phys. Rev. B 100 165426
[13] Marti X, Fina I and Jungwirth T 2015 IEEE Trans. Magn. 51 2900104
[14] Marti X, Fina I, Frontera C, Liu J, Wadley P, He Q, Paull R J, Clarkson J D, Kudrnovsky J, Turek I, Kune s J, Yi D, Chu J H, Nelson C T, You L, Arenholz E, Salahuddin S, Fontcuberta J, Jungwirth T and Ramesh R 2014 Nat. Mater. 13 367
[15] Moriyama T, Matsuzaki N, Kim K J, Suzuki I, Taniyama T and Ono T 2015 Appl. Phys. Lett. 107 122403
[16] Che B, Hu G, Zhu C, Guo H, Lv S, Liu X, Wu K, Zhao Z, Pan L, Zhu K, Qi Q, Han Y, Lin X, Li Z A, Shen C, Bao L, Liu Z, Zhou J, Yang H and Gao H J 2024 Chin Phys. B 33 027502
[17] Qiao Z, Ren W, Chen H, Bellaiche L, Zhang Z, MacDonald A H and Niu Q 2014 Phys. Rev. Lett. 112 116404
[18] Ziebel M E, Feuer M L, Cox J, Zhu X, Dean C R and Roy X 2024 Nano Lett. 24 4319
[19] Klein J and Ross F M 2024 J. Mater. Res. 39 3045
[20] Guo J, Shi W, Ni K, Chen X, Liu D, Liu X, Wang S, Li Q, Xiao R C and Yang M 2025 Chin Phys. B 34 104203
[21] Shcherbakov D, Stepanov P, Weber D, Wang Y, Hu J, Zhu Y, Watanabe K, Taniguchi T, Mao Z, Windl W, Goldberger J, Bockrath M and Lau C N 2018 Nano Lett. 18 4214
[22] Yang B, Bhujel B, Chica D G, Telford E J, Roy X, Ibrahim F, Chshiev M, Cosset-Cheneau M and Wees B J V 2024 Nat. Commun. 15 4459
[23] Scheie A, Ziebel M, Chica D G, Bae Y J, Wang X, Kolesnikov A I, Zhu X and Roy X 2022 Adv. Sci. 9 2202467
[24] Beck J 1990 Z. Anorg. Allg. Chem. 585 157
[25] PPizzocchero F, Gammelgaard L, Jessen B S, Caridad J M, Wang L, Hone J, Bøggild P and Booth T J 2016 Nat. Commun. 7 11894
[26] Ye C, Wang C, Wu Q, Liu S, Zhou J, Wang G, Soll A, Sofer Z, Yue M, Liu X, Tian M, Xiong Q, Ji W and Renshaw Wang X 2022 ACS Nano 16 11876
[27] Telford E J, Dismukes A H, Lee K, Cheng M, Wieteska A, Bartholomew A K, Chen Y, Xu X, Pasupathy A N, Zhu X, Dean C R and Roy X 2020 Adv. Mater. 32 2003240
[28] Telford E J, Dismukes A H, Dudley R L, Wiscons R A, Lee K, Chica D G, Ziebel M E, Han M G, Yu J, Shabani S, Scheie A, Watanabe K, Taniguchi T, Xiao D, Zhu Y, Pasupathy A N, Nuckolls C, Zhu X, Dean C R and Roy X 2022 Nat. Mater. 21 754
[29] Wang X, Yang Y, Li Y, Liu G, Duan J, Wang Z, Lu L and Yang F 2025 Phys. Rev. B 112 165204
[30] Li C Z, Wang L X, Liu H, Wang J, Liao Z M and Yu D P 2015 Nat. Commun. 6 10137
[31] Karki Chhetri S, Acharya G, Graf D, Basnet R, Rahman S, Sharma M M, Upreti D, Nabi M R U, Kryvyi S, Sakon J, Mortazavi M, Da B, Churchill H and Hu J 2025 Phys. Rev. B 111 014431
[32] Liu H, Xue Y, Shi J A, Guzman R A, Zhang P, Zhou Z, He Y, Bian C, Wu L, Ma R, Chen J, Yan J, Yang H, Shen C M, Zhou W, Bao L and Gao H J 2019 Nano Lett. 19 8572
[33] Qi Q, Lv S, Zhu K, Xie Y, Hu G, Zhao Z, Xian G, Han Y, Yang Y, Bao L, Lin X, Guo H, Yang H and Gao H J 2025 Chin Phys. B 34 077305
[34] Fu Y, Zhao N, Chen Z, Yin Q, Tu Z, Gong C, Xi C, Zhu X, Sun Y, Liu K and Lei H 2021 Phys. Rev. Lett. 127 207002
[35] Ding L, Koo J, Yi C, Xu L, Zuo H, Yang M, Shi Y, Yan B, Behnia K and Zhu Z 2021 J. Phys. D: Appl. Phys. 54 454003
[36] Liang T, Gibson Q, Ali M N, Liu M, Cava R J and Ong N P 2015 Nat. Mater. 14 280
[37] Mikitik G P and Sharlai Yu V 1999 Phys. Rev. Lett. 82 2147
[38] Luk’yanchuk I A and Kopelevich Y 2004 Phys. Rev. Lett. 93 166402
[39] Xiang F X, Wang X L, Veldhorst M, Dou S X and Fuhrer M S 2015 Phys. Rev. B 92 035123
[40] Rassekh M and Gmitra M 2026 Phys. Rev. B 113 035126
[41] Mao R, Feng Z and Li Z 2026 Appl. Surf. Sci. 732 166508
[1] Quantum anomalous Hall effect with tunable Chern numbers induced by d-wave sublattice-staggered altermagnetism
Lizhou Liu(刘立周) and Qing-Feng Sun(孙庆丰). Chin. Phys. B, 2026, 35(5): 057301.
[2] Large anomalous Hall and Nernst effect in the breathing kagome ferromagnet NdCrGe3
Yang Liu(刘洋), Meng Lyu(吕孟), Junyan Liu(刘俊艳), Yibo Wang(王一博), Jinying Yang(杨金颖), Binbin Wang(王彬彬), Xiyang Li(李西阳), and Enke Liu(刘恩克). Chin. Phys. B, 2026, 35(5): 057201.
[3] Anomalous Hall effect in kagome ferromagnet MgMn6Sn6 single crystal
Zhonghua Ma(马中华), Jie Du(杜杰), Jianhua Wang(王建华), Feng Zhou(周凤), Jie Chen(陈杰), Tao Zhu(朱涛), Hang Li(李航), and Wenhong Wang(王文洪). Chin. Phys. B, 2026, 35(2): 027302.
[4] Temperature-dependent magnetotransport properties of CoFe2O4/Pt heterostructure
Haomang He(何浩茫), Ruijie Xu(徐睿劼), Anke Song(宋安柯), Zhongqiang Chen(陈中强), and Xuefeng Wang(王学锋). Chin. Phys. B, 2026, 35(1): 017502.
[5] Anomalous Hall effect and Lifshitz transition in Fe3Sn2 nanosheets
Xue Yang(杨雪), Jijian Liu(刘继健), Xinyi Zheng(郑新义), Lei Xu(徐磊), Lihong Hu(胡利洪), Sicheng Zhou(周思成), Siyuan Zhou(周思远), Ximing Zhang(张栖铭), Bingbing Tong(仝冰冰), Jie Shen(沈洁), Zhaozheng Lyu(吕昭征), Xiunian Jing(景秀年), Fanming Qu(屈凡明), Peiling Li(李沛岭), Jiadong Zhou(周家东), Guangtong Liu(刘广同), and Li Lü(吕力). Chin. Phys. B, 2026, 35(1): 017503.
[6] Tunable colossal negative magnetoresistance of topological semimetal EuB6 thin sheets
Ke Zhu(祝轲), Qi Qi(齐琦), Yaofeng Xie(谢耀锋), Lulu Pan(潘禄禄), Senhao Lv(吕森浩), Guojing Hu(胡国静), Zhen Zhao(赵振), Guoyu Xian(冼国裕), Yechao Han(韩烨超), Lihong Bao(鲍丽宏), Ying Zhang(张颖), Xiao Lin(林晓), Hui Guo(郭辉), Haitao Yang(杨海涛), and Hong-Jun Gao(高鸿钧). Chin. Phys. B, 2025, 34(9): 097308.
[7] Observation of distinct Kondo effect and anomalous Hall effect in V self-intercalated layered antiferromagnet V5S8 crystals
Yaofeng Xie(谢耀锋), Senhao Lv(吕森浩), Qi Qi(齐琦), Guojing Hu(胡国静), Ke Zhu(祝轲), Zhen Zhao(赵振), Guoyu Xian(冼国裕), Yechao Han(韩烨超), Ruwen Wang(王汝文), Chenyu Bai(白晨宇), Lihong Bao(鲍丽宏), Xiao Lin(林晓), Hui Guo(郭辉), Haitao Yang(杨海涛), and Hong-Jun Gao(高鸿钧). Chin. Phys. B, 2025, 34(8): 087303.
[8] In-plane negative magnetoresistance and quantum oscillations in van der Waals antiferromagnet DyTe3
Qi Qi(齐琦), Senhao Lv(吕森浩), Ke Zhu(祝轲), Yaofeng Xie(谢耀锋), Guojing Hu(胡国静), Zhen Zhao(赵振), Guoyu Xian(冼国裕), Yechao Han(韩烨超), Yang Yang(杨洋), Lihong Bao(鲍丽宏), Xiao Lin(林晓), Hui Guo(郭辉), Haitao Yang(杨海涛), and Hong-Jun Gao(高鸿钧). Chin. Phys. B, 2025, 34(7): 077305.
[9] Current density in anomalous Hall effect regime under weak scattering
Ning Dai(戴凝) and Bin Zhou(周斌). Chin. Phys. B, 2025, 34(7): 077301.
[10] Quantum anomalous Hall effect in twisted bilayer graphene
Wen-Xiao Wang(王文晓), Yi-Wen Liu(刘亦文), and Lin He(何林). Chin. Phys. B, 2025, 34(4): 047301.
[11] Anomalous Hall effect in Bernal tetralayer graphene enhanced by spin-orbit interaction
Zhuangzhuang Qu(曲壮壮), Zhihao Chen(陈志豪), Xiangyan Han(韩香岩), Zhiyu Wang(王知雨), Zhuoxian Li(李卓贤), Qianling Liu(刘倩伶), Wenjun Zhao(赵文俊), Kenji Watanabe, Takashi Taniguchi, Zhi-Gang Cheng(程智刚), Zizhao Gan(甘子钊), and Jianming Lu(路建明). Chin. Phys. B, 2025, 34(3): 037201.
[12] Tunable anomalous Hall effect and anisotropic magnetism in In-doped TbMn6Sn6 kagome magnets
Detong Wu(吴德桐), Jianwei Qin(秦建伟), and Bing Shen(沈冰). Chin. Phys. B, 2025, 34(10): 107511.
[13] Chemical pressure manipulation of ferromagnetism in magnetic semiconductor Ba(Zn,Mn,Cu)2As2
Xueqin Zhao(赵雪芹), Jinou Dong(董金瓯), Lingfeng Xie(谢玲凤), Xun Pan(潘洵), Haoyuan Tang(唐浩原), Zhicheng Xu(徐之程), and Fanlong Ning(宁凡龙). Chin. Phys. B, 2025, 34(10): 107510.
[14] Evolution of anomalous Hall effect in ferromagnetic Weyl semimetal NbxZr1-xCo2Sn
Bo-Wen Chen(陈博文) and Bing Shen(沈冰). Chin. Phys. B, 2024, 33(8): 087501.
[15] Intrinsic valley-polarized quantum anomalous Hall effect in a two-dimensional germanene/MnI2 van der Waals heterostructure
Xiao-Jing Dong(董晓晶) and Chang-Wen Zhang(张昌文). Chin. Phys. B, 2024, 33(7): 077303.
No Suggested Reading articles found!