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Displacement damage effects of low-energy gallium ion irradiation on single-walled carbon nanotube field-effect transistors |
| Yu Zhang(张宇)1,2, Huanling Wang(王焕灵)1,2, Chenyin Jiao(焦陈寅)3, Jiaze Qin(秦嘉泽)3, Zejuan Zhang(张泽娟)3, Shenghai Pei(裴胜海)3, Suhan Tang(汤苏涵)1,2, Feiliang Chen(陈飞良)1,2, Ge Tang(汤戈)4, Juan Xia(夏娟)3, Chuan Wang(王川)1,2, Mo Li(李沫)1,2,†, Hongxia Guo(郭红霞)5,6, Xiaoping Ouyang(欧阳晓平)5,6, and Jian Zhang(张健)1,2 |
1 School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China;
2 Center for Electronics-Photonics Converged Millimeterwave and Terahertz Technologies, University of Electronic Science and Technology of China, Chengdu 611731, China;
3 Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China;
4 Chengdu University of Technology, College of Nuclear Technology and Automation Engineering, Chengdu 610059 China;
5 School of Material Science and Engineering, Xiangtan University, Xiangtan 411105, China;
6 Northwest Institute of Nuclear Technology, Xi'an 710024, China |
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Abstract The displacement damage (DD) effects induced by low-energy gallium ions (Ga$^{+}$) on single-walled carbon nanotube field-effect transistors (SWCNT FETs) are investigated in this study. Exposure to 5 keV Ga$^{+}$ irradiation resulted in significant changes in the Raman spectra and electrical properties of the devices. The key finding reveals a strong heavy-ion energy dependence of displacement damage (DD): the displacement damage dose ($D_{\rm d}$) induced by 5 keV Ga$^{+}$ irradiation is nearly three orders of magnitude higher than that induced by 2225 MeV xenon ions (Xe$^{+}$). By integrating Raman spectroscopy, electrical characterization, and TRIM simulations, we demonstrate that low-energy heavy ions deposit substantially more energy via non-ionizing energy loss (NIEL) processes within the SWCNT and gate oxide layers compared with high-energy ions. This enhanced energy deposition generates more atomic displacements and vacancies, which significantly degrade both the conductivity of the SWCNT channel and the insulating properties of the gate oxide. These findings provide critical insights into the impact of low-energy ion irradiation on SWCNTs and contribute to a deeper understanding of SWCNT FET behavior in radiation environments.
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Received: 26 July 2025
Revised: 27 September 2025
Accepted manuscript online: 30 September 2025
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PACS:
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61.8.Jh
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81.05.U-
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(Carbon/carbon-based materials)
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88.30.rh
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(Carbon nanotubes)
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61.80.Az
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(Theory and models of radiation effects)
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| Fund: Project supported by Nuclear Technology R&D Program HJSYF2024(04), the Fundamental Research Funds for the Central Universities (Grant No. ZYGX2021J031), and the Fundamental Research Funding (Grant No. JCKY2021110B069). |
Corresponding Authors:
Mo Li
E-mail: limo@uestc.edu.cn
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Cite this article:
Yu Zhang(张宇), Huanling Wang(王焕灵), Chenyin Jiao(焦陈寅), Jiaze Qin(秦嘉泽), Zejuan Zhang(张泽娟), Shenghai Pei(裴胜海), Suhan Tang(汤苏涵), Feiliang Chen(陈飞良), Ge Tang(汤戈), Juan Xia(夏娟), Chuan Wang(王川), Mo Li(李沫), Hongxia Guo(郭红霞), Xiaoping Ouyang(欧阳晓平), and Jian Zhang(张健) Displacement damage effects of low-energy gallium ion irradiation on single-walled carbon nanotube field-effect transistors 2026 Chin. Phys. B 35 076104
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