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Corrigendum to “High-throughput discovery of kagome materials in transition metal oxide monolayers” |
| Renhong Wang(王人宏)1,2, Cong Wang(王聪)1,2,†, Ruixuan Li(李睿宣)1,3, Deping Guo(郭的坪)4,1, Jiaqi Dai(戴佳琦)1,2, Canbo Zong(宗灿波)1,2, Weihan Zhang(张伟涵)1,2, and Wei Ji(季威)1,2,‡ |
1 Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, School of Physics, Renmin University of China, Beijing 100872, China;
2 Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China;
3 Beijing No. 35 High School, Beijing 100037, China;
4 College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, China |
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Abstract The labels of VU1 and VU2 in Fig. 1(b) of the paper [Chin. Phys. B 34 046801 (2025)] were not correctly placed. The correct figure is provided. This modification does not affect the result presented in the paper.
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Received: 22 August 2025
Accepted manuscript online: 25 August 2025
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PACS:
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99.10.-x
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(Errata and other corrections)
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68.35.Dv
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(Composition, segregation; defects and impurities)
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68.65.-k
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(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)
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73.22.-f
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(Electronic structure of nanoscale materials and related systems)
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75.70.Ak
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(Magnetic properties of monolayers and thin films)
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Corresponding Authors:
Cong Wang, Wei Ji
E-mail: wcphys@ruc.edu.cn;wji@ruc.edu.cn
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Cite this article:
Renhong Wang(王人宏), Cong Wang(王聪), Ruixuan Li(李睿宣), Deping Guo(郭的坪), Jiaqi Dai(戴佳琦), Canbo Zong(宗灿波), Weihan Zhang(张伟涵), and Wei Ji(季威) Corrigendum to “High-throughput discovery of kagome materials in transition metal oxide monolayers” 2025 Chin. Phys. B 34 099902
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[1] Wang R H, Wang C, Li R X, Guo D P, Dai J Q, Zong C B, Zhang W H and Ji W 2025 Chin. Phys. B 34 046801
[2] Zhang Z Q, Dai J Q, Wang C, Zhu H, Pang F, Cheng Z H and Ji W 2025 Adv. Funct. Mater. 35 2416508 |
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