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An SOT-switchable micromagnet scheme of adiabatic geometric gates for silicon spin qubits |
| Fang-Ge Li(李方阁)1,2, Ranran Cai(蔡冉冉)1,2,†, Bao-Chuan Wang(王保传)1,2, Hai-Ou Li(李海欧)1,2,3, Gang Cao(曹刚)1,2,3,‡, and Guo-Ping Guo(郭国平)1,2,3,4 |
1 Chinese Academy of Sciences (CAS) Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China;
2 CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;
3 Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China;
4 Origin Quantum Computing Company Limited, Hefei 230088, China |
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Abstract Geometric phase gates have attracted considerable attention due to their intrinsic robustness against certain types of noise. Significant progress has been achieved in implementing geometric phase gates using microwave control in silicon-based electron spin systems. In this work, we propose an alternative geometric phase gate protocol that differs fundamentally from microwave driving approaches by leveraging square-wave control of rapidly switchable micromagnets driven by spin-orbit torque (SOT) to achieve fast and precise magnetic field modulation. By employing square-wave currents to control magnetization switching, our approach relaxes the requirements on waveform precision while significantly suppressing crosstalk. Moreover, our scheme inherently preserves trajectory closure at the end of each operation, effectively mitigating noise-induced path deviation and enhancing gate robustness even under strong noise conditions, thereby offering a promising pathway toward efficient and reliable quantum operations in large-scale qubit arrays.
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Received: 09 April 2025
Revised: 23 May 2025
Accepted manuscript online: 26 May 2025
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PACS:
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03.67.Lx
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(Quantum computation architectures and implementations)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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73.61.Cw
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(Elemental semiconductors)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12304560, 92265113, 12074368, and 12034018), the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302300), and China Postdoctoral Science Foundation (Grant Nos. BX20220281 and 2023M733408). |
Corresponding Authors:
Ranran Cai, Gang Cao
E-mail: cairanran@ustc.edu.cn;gcao@ustc.edu.cn
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Cite this article:
Fang-Ge Li(李方阁), Ranran Cai(蔡冉冉), Bao-Chuan Wang(王保传), Hai-Ou Li(李海欧), Gang Cao(曹刚), and Guo-Ping Guo(郭国平) An SOT-switchable micromagnet scheme of adiabatic geometric gates for silicon spin qubits 2025 Chin. Phys. B 34 110306
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