1 Key Laboratory of Material Simulation Methods & Software of Ministry of Education, State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China; 2 Institute of High Pressure Physics, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
Abstract Two-dimensional (2D) superconductors have attracted significant research interest due to their promising potential applications in optoelectronic and microelectronic devices. Herein, we employ first-principles calculations to predicted a new 2D conventional superconductor, TcB, demonstrating its stable structural configuration. Remarkably, under biaxial strain, the superconducting transition temperature () of TcB demonstrates a significant enhancement, achieving 19.5 K under 3{\%} compressive strain and 9.2 K under 11{\%} tensile strain. Our study reveals that strain-induced modifications in Fermi surface topology significantly enhance the Fermi surface nesting effect, which amplifies electron-phonon coupling interactions and consequently elevates . Additionally, the presence of the Lifshitz transition results in a more pronounced rise in under compressive strain compared to tensile strain. These insights offer important theoretical guidance for designing 2D superconductors with high- through strain modulation.
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12274169, 12122405, and 52072188), the National Key Research and Development Program of China (Grant No. 2022YFA1402304), the Program for Science and Technology Innovation Team in Zhejiang Province, China (Grant No. 2021R01004), and the Fundamental Research Funds for the Central Universities. Parts of calculations were performed in the High Performance Computing Center (HPCC) of Jilin University and TianHe-1(A) at the National Supercomputer Center in Tianjin.
Zhengtao Liu(刘正涛), Zihan Zhang(张子涵), Hao Song(宋昊), Tian Cui(崔田) and Defang Duan(段德芳) Strain-modulated superconductivity of monolayer Tc2B2 2025 Chin. Phys. B 34 047104
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