| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Nonvolatile ferroelectric control of electronic properties of Bi2Te3 |
| Xusheng Ding(丁旭升), Yunfei Li(李云飞), Chaoyang Kang(康朝阳), Ye-Heng Song(宋业恒)†, and Weifeng Zhang(张伟风)‡ |
| Henan Key Laboratory of Quantum Materials and Quantum Energy, Center for Topological Functional Materials, School of Future Technology, Henan University, Kaifeng 475004, China |
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Abstract Nonvolatile electric-field control of the unique physical characteristics of topological insulators (TIs) is essential for the fundamental research and development of practical electronic devices. Electrically tunable transport properties through gating materials have been extensively investigated. However, the relatively weak and volatile tunability limits its practical applications in spintronics. Here, we demonstrate the nonvolatile electric-field control of Bi$_{2}$Te$_{3}$ transport properties via constructing ferroelectric Rashba architectures, i.e., 2D Bi$_{2}$Te$_{3}/\alpha $-In$_{2}$Se$_{3}$ ferroelectric field-effect transistors. By switching the polarization states of $\alpha $-In$_{2}$Se$_{3}$, the Fermi level, resistance, Fermi wave vector, carrier mobility, carrier density and magnetoresistance (MR) of the Bi$_{2}$Te$_{3}$ film can be effectively modulated. Importantly, a shift of the Fermi level towards a band gap with a surface state occurs as switching to a negative polarization state, the contribution of the surface state to the conductivity then increases, thereby increasing the carrier mobility and electron coherence length significantly, resulting in the enhanced weak anti-localization (WAL) effect. These results provide a nonvolatile electric-field control method to tune the electronic properties of TI and can further extend to quantum transport properties.
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Received: 08 May 2024
Revised: 31 August 2024
Accepted manuscript online: 03 September 2024
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PACS:
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73.50.-h
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(Electronic transport phenomena in thin films)
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77.84.-s
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(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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72.15.Rn
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(Localization effects (Anderson or weak localization))
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12004099 and 11974099), the Zhongyuan Leading Talents, Plan for Leading Talent of Fundamental Research of the Central China in 2020, and the Intelligence Introduction Plan of Henan Province in 2021 (Grant No. CXJD2021008). |
Corresponding Authors:
Ye-Heng Song, Weifeng Zhang
E-mail: yehengsong@henu.edu.cn;wfzhang@henu.edu.cn
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Cite this article:
Xusheng Ding(丁旭升), Yunfei Li(李云飞), Chaoyang Kang(康朝阳), Ye-Heng Song(宋业恒), and Weifeng Zhang(张伟风) Nonvolatile ferroelectric control of electronic properties of Bi2Te3 2024 Chin. Phys. B 33 117301
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