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Quantum confinement of carriers in the type-I quantum wells structure |
| Xinxin Li(李欣欣)1,2,†, Zhen Deng(邓震)1,2,3,†, Yang Jiang(江洋)1,2, Chunhua Du(杜春花)1,2,3, Haiqiang Jia(贾海强)1,2,4, Wenxin Wang(王文新)1,2,4, and Hong Chen(陈弘)1,2,3,4,‡ |
1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 The Yangtze River Delta Physics Research Center, Liyang 213000, China;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China |
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Abstract Quantum confinement is recognized to be an inherent property in low-dimensional structures. Traditionally, it is believed that the carriers trapped within the well cannot escape due to the discrete energy levels. However, our previous research has revealed efficient carrier escape in low-dimensional structures, contradicting this conventional understanding. In this study, we review the energy band structure of quantum wells along the growth direction considering it as a superposition of the bulk material dispersion and quantization energy dispersion resulting from the quantum confinement across the whole Brillouin zone. By accounting for all wave vectors, we obtain a certain distribution of carrier energy at each quantized energy level, giving rise to the energy subbands. These results enable carriers to escape from the well under the influence of an electric field. Additionally, we have compiled a comprehensive summary of various energy band scenarios in quantum well structures relevant to carrier transport. Such a new interpretation holds significant value in deepening our comprehension of low-dimensional energy bands, discovering new physical phenomena, and designing novel devices with superior performance.
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Received: 15 June 2024
Revised: 26 June 2024
Accepted manuscript online: 02 July 2024
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PACS:
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73.21.Fg
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(Quantum wells)
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73.20.At
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(Surface states, band structure, electron density of states)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61991441 and 62004218), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB01000000), and Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2021005). |
Corresponding Authors:
Hong Chen
E-mail: hchen@iphy.ac.cn
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Cite this article:
Xinxin Li(李欣欣), Zhen Deng(邓震), Yang Jiang(江洋), Chunhua Du(杜春花), Haiqiang Jia(贾海强), Wenxin Wang(王文新), and Hong Chen(陈弘) Quantum confinement of carriers in the type-I quantum wells structure 2024 Chin. Phys. B 33 097301
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