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Special Issue:
SPECIAL TOPIC — Valleytronics
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Transport properties of Hall-type quantum states in disordered bismuthene |
| Jiaojiao Zhou(周娇娇)1, Jiangying Yu(余江应)1, Shuguang Cheng(成淑光)2,†, and Hua Jiang(江华)3,‡ |
1 Key Laboratory of Advanced Electronic Materials and Devices, School of Mathematics and Physics, Anhui Jianzhu University, Hefei 230601, China;
2 Department of Physics, Northwest University, Xi'an 710069, China;
3 School of Physical Science and Technology, Soochow University, Suzhou 215006, China |
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Abstract Bismuthene, an inherently hexagonal structure characterized by a huge bulk gap, offers a versatile platform for investigating the electronic transport of various topological quantum states. Using nonequilibrium Green's function method and Landauer—Büttiker formula, we thoroughly investigate the transport properties of various Hall-type quantum states, including quantum spin Hall (QSH) edge states, quantum valley Hall kink (QVHK) states, and quantum spin—valley Hall kink (QSVHK) states, in the presence of various disorders. Based on the exotic transport features, a spin—valley filter, capable of generating a highly spin- and valley-polarized current, is proposed. The valley index and the spin index of the filtered QSVHK state are determined by the staggered potential and the intrinsic spin—orbit coupling, respectively. The efficiency of the spin—valley filter is supported by the spacial current distribution, the valley-resolved conductance, and the spin-resolved conductance. Compared with a sandwich structure for QSVHK, our proposed spin—valley filter can work with a much smaller size and is more accessible in the experiment.
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Received: 09 December 2023
Revised: 19 January 2024
Accepted manuscript online: 05 February 2024
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PACS:
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71.15.-m
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(Methods of electronic structure calculations)
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73.20.-r
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(Electron states at surfaces and interfaces)
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73.23.-b
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(Electronic transport in mesoscopic systems)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 12104012), the Natural Science Foundation of Anhui Province of China (Grant No. 2108085MB42), the Key Research and Development Plan of Anhui Province of China (Grant No. 202104a05020048), the Major Science and Technology Project of Anhui Province of China (Grant No. 2021e03020007), and the Doctor Foundation of Anhui Jianzhu University (Grant No. 2019QDZ45). |
Corresponding Authors:
Shuguang Cheng, Hua Jiang
E-mail: sgcheng@nwu.edu.cn;jianghuaphy@suda.edu.cn
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Cite this article:
Jiaojiao Zhou(周娇娇), Jiangying Yu(余江应), Shuguang Cheng(成淑光), and Hua Jiang(江华) Transport properties of Hall-type quantum states in disordered bismuthene 2024 Chin. Phys. B 33 047105
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