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Gate-voltage control of alternating-current-driven skyrmion propagation in ferromagnetic nanotrack devices |
| Xin-Yi Cai(蔡心怡)1, Zhi-Hua Chen(陈志华)2, Hang-Xiao Yang(杨航霄)1, Xin-Yan He(何鑫岩)1, Zhen-Zhen Chen(陈珍珍)1, Ming-Min Zhu(朱明敏)1, Yang Qiu(邱阳)1, Guo-Liang Yu(郁国良)1,†, and Hao-Miao Zhou(周浩淼)1,‡ |
1 Key Laboratory of Electromagnetic Wave Information Technology and Metrology of Zhejiang Province, College of Information Engineering, China Jiliang University, Hangzhou 310018, China;
2 Zhejiang Chunhui Magnetoelectric Technology Co., Ltd, Shaoxing 312300, China |
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Abstract Magnetic skyrmions, with topologically protected particle-like magnetization configurations, are promising information carriers for future spintronics devices with ultralow energy consumption. Generally, during motion, skyrmions suffer from the skyrmion Hall effect (SkHE) wherein the skyrmions deflect away from the intended path of the driving force. Numerous methods have been proposed to avoid this detrimental effect. In this study, we propose controllable alternating current (AC)-driven skyrmion propagation in a ferromagnetic nanowire based on combination of gate-voltage-controlled magnetic anisotropy (VCMA) and SkHE. Micromagnetic simulations show that a skyrmion oscillatory closed-loop-like in situ motion driven by AC can be transformed into directional ratchet-like propagation along the nanotrack by creating a VCMA-gate barrier. Additionally, we show that the skyrmion propagation conditions depend on the gate barrier potential and driving AC parameters, and they can be used for the optimal design of nanotrack devices. Moreover, this mechanism could be used to control skyrmion macroscopic propagation directions by dynamically alternating the voltage of another series of gates. We further show the dynamic control of the long-distance propagation of skyrmions along with the pinning state. The study results provide a promising route for designing future skyrmion-based spintronics logical and memory devices.
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Received: 26 November 2022
Revised: 10 January 2023
Accepted manuscript online: 18 January 2023
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PACS:
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75.40.Mg
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(Numerical simulation studies)
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75.60.Ch
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(Domain walls and domain structure)
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75.78.Cd
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(Micromagnetic simulations ?)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51902300, 11972333, and 11902316), the Natural Science Foundation of Zhejiang Province, China (Grant Nos. LY21F010011, LZ19A020001, and LZ23A020002), and the Fundamental Research Funds for the Provincial Universities of Zhejiang (Grant Nos. 2021YW02 and 2022YW88). G. L. Yu also acknowledges a start-up fund from the China Jiliang University. The simulations were aided by the Key Laboratory of Electromagnetic Wave Information Technology and Metrology of Zhejiang Province. |
Corresponding Authors:
Guo-Liang Yu, Hao-Miao Zhou
E-mail: glyu@cjlu.edu.cn;zhouhm@cjlu.edu.cn
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Cite this article:
Xin-Yi Cai(蔡心怡), Zhi-Hua Chen(陈志华), Hang-Xiao Yang(杨航霄), Xin-Yan He(何鑫岩), Zhen-Zhen Chen(陈珍珍), Ming-Min Zhu(朱明敏), Yang Qiu(邱阳), Guo-Liang Yu(郁国良), and Hao-Miao Zhou(周浩淼) Gate-voltage control of alternating-current-driven skyrmion propagation in ferromagnetic nanotrack devices 2023 Chin. Phys. B 32 067502
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