High stability and low noise laser-diode end-pumped Nd: YAG ceramic passively Q-switched laser at 1123 nm based on a Ti3C2Tx-PVA saturable absorber
Jia-Le Yan(闫佳乐)1, Ben Li(李奔)1, Guo-Zhen Wang(王国珍)1, Shun-Yu Yang(杨顺宇)1, Bao-Le Lu(陆宝乐)1,2, and Yang Bai(白杨)1,2,†
1 Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710127, China; 2 Shaanxi Engineering Technology Research Center for Solid State Lasers and Application, Xi'an 710127, China
Abstract We report a high repetition frequency, high power stability and low laser noise laser-diode (LD) end-pumped Nd: YAG ceramic passively Q-switched laser at 1123 nm based on a Ti3C2Tx-polyvinyl alcohol (PVA) film as a saturable absorber (SA). A Brewster polarizer (BP) and a birefringent crystal (BC) are incorporated to enable frequency selection and filtering for the passively Q-switched 1123 nm pulsed laser to improve the power stability and reduce the noise. When the pump power is 5.1 W, an average output power of 457.9 mW is obtained, corresponding to a repetition frequency of 1.09 MHz, a pulse width of 56 ns, a spectral line width of 0.65 nm, a power instability of ± 0.92%, and a laser noise of 0.89%. The successful implementation of the “Ti3C2Tx-PVA film passively Q-switching” combined with “frequency selection and filtering of m BP + BC” technology path provides a valuable reference for developing pulsed laser with high repetition frequency, high stability and low noise.
(Efficiency, stability, gain, and other operational parameters)
Fund: Project supported by the Serving Local Special Project of Shaanxi Provincial Department of Education of China (Grant No. 19JC040) and the National Natural Science Foundation of China (Grant No. 61905193).
Corresponding Authors:
Yang Bai
E-mail: by@nwu.edu.cn
Cite this article:
Jia-Le Yan(闫佳乐), Ben Li(李奔), Guo-Zhen Wang(王国珍), Shun-Yu Yang(杨顺宇), Bao-Le Lu(陆宝乐), and Yang Bai(白杨) High stability and low noise laser-diode end-pumped Nd: YAG ceramic passively Q-switched laser at 1123 nm based on a Ti3C2Tx-PVA saturable absorber 2023 Chin. Phys. B 32 114212
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