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Photoemission oscillation in epitaxially grown van der Waals β-In2Se3/WS2 heterobilayer bubbles |
| Jiyu Dong(董继宇)1,†, Kang Lin(林康)1,†, Congpu Mu(牟从普)1,2,‡, Zhiyan Jia(贾智研)1, Jin Xu(徐瑾)2, Anmin Nie(聂安民)1, Bochong Wang(王博翀)2, Jianyong Xiang(向建勇)1,§, Fusheng Wen(温福昇)1, Kun Zhai(翟昆)1, Tianyu Xue(薛天宇)1, and Zhongyuan Liu(柳忠元)1 |
1 Center for High Pressure Science(CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao 066004, China;
2 Key Laboratory of Microstructure Materials Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China |
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Abstract Thin films of millimeter-scale continuous monolayer WS2 have been grown on SiO2/Si substrate, followed by the deposition of β-In2Se3 crystals on monolayer WS2 to prepare In2Se3/WS2 van de Waals heterostructures by a two-step chemical vapor deposition (CVD) method. After the growth of In2Se3 at elevated temperatures, high densities of In2Se3/WS2 heterostructure bubbles with monolayer to multilayer β-In2Se3 crystals atop are observed. Fluorescence of the resultant β-In2Se3/WS2 heterostructure is greatly enhanced in intensity upon the formation of bubbles, which are evidenced by the Newton's rings in optical image owing to constructive and destructive interference. In photoluminescence (PL) mapping images of monolayer β-In2Se3/monolayer WS2 heterobilayer bubble, significant oscillatory behavior of emission intensity is demonstrated due to constructive and destructive interference. However, oscillatory behaviors of peak position are also observed and come from a local heating effect induced by an excitation laser beam. The oscillatory mechanism of PL is further verified by changing the exterior pressure of bubbles placed in a home-made vacuum chamber. In addition, redshifted in peak position and broadening in peak width are observed due to strain effect during decreasing the exterior pressure of bubbles.
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Received: 12 August 2021
Revised: 08 September 2021
Accepted manuscript online: 16 September 2021
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PACS:
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79.60.Jv
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(Interfaces; heterostructures; nanostructures)
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33.20.Fb
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(Raman and Rayleigh spectra (including optical scattering) ?)
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61.72.uj
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(III-V and II-VI semiconductors)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51732010 and 51972280), the Natural Science Foundation of Hebei Province, China (Grant No. E2019203233), the Research Program of the College Science & Technology of Hebei Province, China (Grant No. ZD2020121). |
Corresponding Authors:
Congpu Mu, Jianyong Xiang
E-mail: congpumu@ysu.edu.cn;jyxiang@ysu.edu.cn
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Cite this article:
Jiyu Dong(董继宇), Kang Lin(林康), Congpu Mu(牟从普), Zhiyan Jia(贾智研), Jin Xu(徐瑾), Anmin Nie(聂安民), Bochong Wang(王博翀), Jianyong Xiang(向建勇), Fusheng Wen(温福昇), Kun Zhai(翟昆), Tianyu Xue(薛天宇), and Zhongyuan Liu(柳忠元) Photoemission oscillation in epitaxially grown van der Waals β-In2Se3/WS2 heterobilayer bubbles 2021 Chin. Phys. B 30 117901
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