Super deformability and thermoelectricity of bulk γ-InSe single crystals
Bin Zhang(张斌)1, Hong Wu(吴宏)2, Kunling Peng(彭坤岭)2, Xingchen Shen(沈星辰)2, Xiangnan Gong(公祥南)1, Sikang Zheng(郑思康)2, Xu Lu(卢旭)2, Guoyu Wang(王国玉)4, and Xiaoyuan Zhou(周小元)1,2,†
1 Analytical and Testing Center of Chongqing University, Chongqing 401331, China; 2 Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University, Chongqing 401331, China; 3 Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China; 4 University of Chinese Academy of Sciences, Beijing 100044, China
Abstract Indium selenide, a Ⅲ-V group semiconductor with layered structure, attracts intense attention in various photoelectric applications, due to its outstanding properties. Here, we report super deformability and thermoelectricity of γ-InSe single crystals grown by modified Bridgeman method. The crystal structure of InSe is studied systematically by transmission electron microscopy methods combined with x-ray diffraction and Raman spectroscopy. The predominate phase of γ-InSe with dense stacking faults and local multiphases is directly demonstrated at atomic scale. The bulk γ-InSe crystals demonstrate surprisingly high intrinsic super deformative ability which is highly pliable with bending strains exceeding 12.5% and 264% extension by rolling. At the meantime, InSe also possesses graphite-like features which is printable, writable, and erasable. Finally, the thermoelectric properties of γ-InSe bulk single crystals are preliminary studied and thermal conductivity can be further reduced via bending-induced defects. These findings will enrich the knowledge of structural and mechanical properties' flexibility of InSe and shed lights on the intrinsic and unique mechanical properties of InSe polytypes.
(Thermoelectric, electrogasdynamic and other direct energy conversion)
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11674040, 11604032, 51472036, 51672270, and 11904039), the Fundamental Research Funds for the Central Universities, China (Grant No. 106112016CDJZR308808), and Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH016).
Bin Zhang(张斌), Hong Wu(吴宏), Kunling Peng(彭坤岭), Xingchen Shen(沈星辰), Xiangnan Gong(公祥南), Sikang Zheng(郑思康), Xu Lu(卢旭), Guoyu Wang(王国玉), and Xiaoyuan Zhou(周小元) Super deformability and thermoelectricity of bulk γ-InSe single crystals 2021 Chin. Phys. B 30 078101
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