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Chin. Phys. B, 2018, Vol. 27(4): 047212    DOI: 10.1088/1674-1056/27/4/047212
Special Issue: SPECIAL TOPIC — Recent advances in thermoelectric materials and devices
SPECIAL TOPIC—Recent advances in thermoelectric materials and devices Prev   Next  

Enhanced thermoelectric performance in p-type Mg3Sb2 via lithium doping

Hao Wang(王浩)1,2, Jin Chen(陈进)1,2, Tianqi Lu(陆天奇)2, Kunjie Zhu(朱坤杰)1, Shan Li(李珊)2, Jun Liu(刘军)1, †, and Huaizhou Zhao(赵怀周)2,‡
1. School of Materials Science and Engineering, Central South University, Changsha 410083, China;
2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  The Zintl compound Mg3Sb2 has been recently identified as promising thermoelectric material owing to its high thermoelectric performance and cost-effective, nontoxicity and environment friendly characteristics. However, the intrinsically p-type Mg3Sb2 shows low figure of merit (zT=0.23 at 723 K) for its poor electrical conductivity. In this study, a series of Mg3-xLixSb2 bulk materials have been prepared by high-energy ball milling and spark plasma sintering (SPS) process. Electrical transport measurements on these materials revealed significant improvement on the power factor with respect to the undoped sample, which can be essentially attributed to the increased carrier concentration, leading to a maximum zT of 0.59 at 723 K with the optimum doping level x=0.01. Additionally, the engineering zT and energy conversion efficiency are calculated to be 0.235 and 4.89%, respectively. To our best knowledge, those are the highest values of all reported p-type Mg3Sb2-based compounds with single element doping.
Keywords:  p-type Mg3Sb2 Zintl compounds      lithium doping      carrier concentration      enhanced thermoelectric properties  
Received:  22 January 2018      Revised:  05 March 2018      Accepted manuscript online: 
PACS:  72.20.Pa (Thermoelectric and thermomagnetic effects)  
  73.50.Lw (Thermoelectric effects)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. U1601213 and 51572287) and the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH013).
Corresponding Authors:  †Jun Liu:; ‡Huaizhou   

Cite this article: 

Hao Wang(王浩), Jin Chen(陈进), Tianqi Lu(陆天奇), Kunjie Zhu(朱坤杰), Shan Li(李珊), Jun Liu(刘军), Huaizhou Zhao(赵怀周) Enhanced thermoelectric performance in p-type Mg3Sb2 via lithium doping 2018 Chin. Phys. B 27 047212

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